AOWF15S60 Allicdata Electronics
Allicdata Part #:

AOWF15S60-ND

Manufacturer Part#:

AOWF15S60

Price: $ 1.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 15A TO262F
More Detail: N-Channel 600V 15A (Tc) 27.8W (Tc) Through Hole
DataSheet: AOWF15S60 datasheetAOWF15S60 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.90602
Stock 1000Can Ship Immediately
$ 1.01
Specifications
Series: aMOS™
Packaging: Tube 
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V
FET Feature: --
Power Dissipation (Max): 27.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I²Pak
Description

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The AOWF15S60 is an advanced n-channel enhancement mode metal oxide semiconductor field effect transistor (MOSFET). This FET provides a much larger current than standard FETs, making it suitable for many power applications. It is also exceptionally reliable, with a wide range of voltage options and fast switching time. Additionally, it has low gate capacitance, allowing for repeatable switching times.

This MOSFET is part of the low power group of FETs, which means it is ideal for use in applications where low power consumption is important. This includes radio-frequency devices, low power logic gates, and other RF/microwave amplifiers. It also has an incredibly high resistivity, which makes it well suited for light load switching. The low capacitance also allows for lower losses in applications requiring high-frequency switching.

The AOWF15S60 is an enhancement-mode MOSFET, meaning it requires a voltage applied to the gate to turn it on. This behavior is in contrast to standard FETs, which require a voltage applied to their source. Once the necessary voltage is applied, current can flow through the FET’s gate-source-drain circuit.

The AOWF15S60 also offers excellent protection against shorting, as it has its own built-in diode connected between the source and drain terminals. The diode serves to short out any over-voltages that may occur, protecting the device from damage. Additionally, its extremely low on-resistance enables it to switch quickly and reliably.

This FET has a wide range of applications, from circuit protection, voltage regulation, and lighting control to motor control, light dimming, and motor speed control. It can also be used to provide digital signal control, analog signal amplification, and telecommunications switching. It is often used in situations where high-frequency switching is required due to its low gate capacitance and fast switching times.

Overall, the AOWF15S60 is an advanced and versatile MOSFET suitable for use in a broad variety of applications. Its low power consumption, protection against shorting, and fast switching time make it an ideal choice for many applications. Additionally, its low gate capacitance allows for repeatable and accurate switching.

The specific data is subject to PDF, and the above content is for reference

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