AOWF12N65 Allicdata Electronics
Allicdata Part #:

AOWF12N65-ND

Manufacturer Part#:

AOWF12N65

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 650V 12A TO262F
More Detail: N-Channel 650V 12A (Tc) 28W (Tc) Through Hole
DataSheet: AOWF12N65 datasheetAOWF12N65 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 28W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 720 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AOWF12N65 has long been a reliable and effective transistor used in a host of applications. As a field effect transistor (FET), it is used as a switch in circuits, or to control the current in higher power applications. It is part of the AOWF family of FETs from JiangXi Semiconductor, and is considered one of their best-performing products.

The AOWF12N65 has a 12-volt power supply, a 65-watt power dissipation, and is capable of switching up to 3 amps. It is an N-type FET which means it is best suited to low-frequency applications. Its VGS(off) of –30V ensures good protection against reverse voltage, while its low V threshold guarantee better performance with lower power consumption.

The AOWF12N65 is a single FET, meaning it has only two pins – Gate (G) and Drain (D). The Gate pin controls the FET’s behavior, while the Drain pin controls the current passing through the FET. When the Gate input voltage exceeds the threshold voltage, the FET will turn on, allowing current to flow from the Drain to the Source. When the Gate input voltage is below the threshold voltage, the FET will turn off and no current will flow.

Applications for the AOWF12N65 include high-frequency switching for photonics and microprocessors, power supplies and converters, analog circuits, and biomedical equipment. It is also commonly used for high-current switching applications such as solar power plant inverters or as an interface between a control system and an electromechanical actuation system.

In addition to its performance characteristics, the AOWF12N65 is also known for its low cost, making it one of the most cost-effective FETs on the market. Its compact size and durability ensure that it can be used in a variety of tight spaces, making it ideal for use in embedded applications. It is also RoHS compliant, meaning it meets all of the current environmental standards.

Overall, the AOWF12N65 is an ideal choice for applications that require low-voltage, low-power, and high-frequency switching. Its reasonable cost and low power consumption make it an excellent choice for a variety of applications, from power supplies to biomedical equipment.

The specific data is subject to PDF, and the above content is for reference

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