AOWF4N60

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-262-3 Full Pack, I²Pak
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	640pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	14.5nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.3 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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AOWF4N60 Application Field and Working Principle

AOWF4N60 is a 60-volt overvoltage protected power MOSFET transistors suitable for industrial equipment such as air conditioners, refrigerators, and home appliances. This MOSFET is designed to guard against an overvoltage condition, protecting the circuit from potential damage from a digital signal control as well as from overvoltages that would otherwise cause electrical shorts and cause equipment failure.

Overview of AOWF4N60

The AOWF4N60 is a single N-channel MOSFET, which operates with a very low on-resistance when the gate voltage exceeds its threshold voltage and with a low gate leakage current at all other gate voltages. Designed to protect applications from overvoltage conditions, the AOWF4N60 has a fast response time to sudden overvoltage transients, clamping the voltage and preventing them from being passed on to the application.The AOWF4N60 utilizes reverse conductivity, thereby providing overvoltage protection with a depletion mode MOSFET. When the gate voltage exceeds the threshold voltage of the MOSFET, a conduction channel is formed in the reverse direction. This allows the MOSFET to lower the voltage accordingly and protect the device from overvoltages.Moreover, a non-magnetic design and a low on-resistance make the AOWF4N60 ideal for signal control applications operating on a high input voltage.

Application Fields

The AOWF4N60 is a versatile MOSFET suitable for a wide range of application fields. These include HVAC and other industrial equipment, household and kitchen appliances, automotive electronics, and power supplies. Due to its fast response time and low on-resistance, it is an effective solution for clamping overvoltage transients and protecting delicate circuitry from sudden voltage fluctuations.

Working Principle

The AOWF4N60 utilizes a depletion mode MOSFET architecture, which prevents the device from turning on in its forward direction. Any positive gate-source voltage tends to close the channel and push current through the device. As such, the MOSFET is specially designed to take on a low on-resistance whenever the gate voltage exceeds the threshold voltage and remain in a high current blocking state when the gate voltage is below the threshold voltage.When an overvoltage transient is detected, the AOWF4N60 will quickly react, providing a fast clamping action that prevents the overvoltage from being passed on to the application. This protects the device and circuitry from potential damages due to electrical shorts, erroneous signals, and potential hazards from sudden voltage spikes.

Conclusion

The AOWF4N60 is a versatile MOSFET transistor which provides overvoltage protection in a wide variety of industrial and consumer applications. Designed with reverse conductivity and a low on-resistance, the AOWF4N60 quickly responds to overvoltage transients and eliminates their effects on the application, thus preventing damage and ensuring safe operation.

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