AOWF11C60 Allicdata Electronics
Allicdata Part #:

785-1656-5-ND

Manufacturer Part#:

AOWF11C60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 11A TO-262F
More Detail: N-Channel 600V 11A (Tc) 28W (Tc) Through Hole TO-2...
DataSheet: AOWF11C60 datasheetAOWF11C60 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-262-3 Full Pack, I²Pak
Supplier Device Package: TO-262F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 28W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The AOWF11C60 is an advanced Mosfet, or metal oxide semiconductor field effect transistor. It is a terminal type device with three pins, including drain, source and gate connections. The drain and source connections are usually connected to the main power supply, while the gate connection is connected to the control circuit. This type of Mosfet is designed to be used in power components such as power switch, amplifier and voltage regulator. Due to its low on-resistance and high speed switching, this type of Mosfet is commonly used in power electronics applications.

The AOWF11C60 is a high voltage, low current port type MOSFET. It is usually used as a switching device in a high voltage power circuit. It can be used to control the conduction of electrical current through a power circuit by switching power on and off. The total on-resistance of the AOWF11C60 is typically less than 0.5 ohms, making it ideal for power switching applications.

The AOWF11C60 is a single N-Channel, Enhancement Mode Mosfet. It is a type of sectional type transistor characterized by its three-terminal construction. The source and drain terminals are connected to the power supply, while the gate terminal is connected to the control circuit. The gate voltage controls the drain current by controlling the transistor\'s conduction through the channel. When the gate voltage is more positive than the threshold voltage, the transistor becomes conducting. But when the gate voltage is less than the threshold voltage, the transistor becomes non-conducting.

The AOWF11C60 features a high on-resistance and a low output capacitance. It also features a high breakdown voltage and a low gate-drain capacitance. It has excellent ruggedness, thermal stability and high operating temperature range. It provides low gate charge, fast switching speed and low gate drive power. This makes it the perfect choice for high voltage switching applications.

The AOWF11C60 is widely used in high-power applications such as electric motor controllers, DC-DC converters and welding systems. It is also used in high-performance motor drives and power supplies, protection circuits and solid-state relay circuits. It is also used in HVAC equipment, household appliances and power systems.

The AOWF11C60 is typically used as a control device for power switching applications. Its ability to control power with only a few volts of gate voltage makes it ideal for controlling large currents. It is also used as a boost transistor in switching power supplies. It is also used as a linear amplifier in audio and video applications. Its fast switching speeds make it highly suitable for high-speed switching applications.

In conclusion, the AOWF11C60 is a single N-Channel, Enhancement Mode Mosfet with a low on-resistance, high speed switching and high breakdown voltage. It is perfect for power switching applications such as motor control, DC-DC converters, protection circuits and HVAC equipment. It is fast switching, low gate charge, low gate drive power and excellent thermal stability. These features make it the perfect choice for high voltage power circuits.

The specific data is subject to PDF, and the above content is for reference

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