Allicdata Part #: | AOWF12T60-ND |
Manufacturer Part#: |
AOWF12T60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 12A TO262F |
More Detail: | N-Channel 600V 12A (Tc) 28W (Tc) Through Hole TO-2... |
DataSheet: | AOWF12T60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | TO-262F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1954pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOWF12T60 is a logic level N-channel depletion mode Enhancement Mode Field Effect Transistor (EMFET) with Figure of Merit (FOM) greater than 69 dB C/W which is designed for switching or level-shifting applications. It is a Bipolar Depletion mode transistor and has a low gate threshold voltage of 1.8 volts at the 2.0 amps current drain. This low-voltage level makes it suitable for low power logic circuits.
The AOWF12T60 is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) which is a three terminal device. The gate is the control terminal and the drain and the source are the output terminals which operate at very high speed. It has a very low input capacitance of 11pF and can be used for switching as well as for current level shifting from a lower voltage to higher voltage.
The working principle of the AOWF12T60 is based on the migration of charge carriers, either electrons or holes, across a silicon dioxide layer between the two terminals while the field effect transistor is biased. If a positive voltage is applied to the gate of the transistor then it drags the majority of the electron carriers across the gate insulating layer. This in turn enhances the conduction of the electron carriers between the source and the drain.
The AOWF12T60 device is ideal for high speed logic circuits. It offers a fast switching speed whenever required with a minimum transition time. In addition, its low capacitance enables it to be used in various applications such as high-speed transmitter and receiver circuits, as well as single-ended switching applications.
The most common application of AOWF12T60 is in logic level shifting circuits. It can be used to level shift from a lower voltage such as 1.8V to higher voltage such as 3.3V. This oil-based transistor also has excellent high temperature stability and is suitable for operating from -55°C to +145°C.
The AOWF12T60 is also used for general switching purposes. Due to its low gate threshold voltage, it is used in wide range of power switch applications such as motor speed control circuits and even in home appliances. Its low gate to source/drain capacitance enables it to switch off and on quickly without having any adverse effect on the circuit performance.
The AOWF12T60 is an excellent choice for a variety of applications due to its low operating voltage, fast switching speed and low input capacitance. With these features and its wide range of applications, this transistor can be the perfect choice for different design requirements.
The specific data is subject to PDF, and the above content is for reference
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