APTM100DA18CT1G

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APTM100DA18CT1G is a single N–Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It belongs to the series of Power MOSFETs manufactured by Alpha and Omega Semiconductor, with a maximum continuous drain current of 11.2 Amps, at a maximum drain–source voltage of 100 Volts, and a maximum gate–threshold voltage of 1.8 Volts. This makes APTM100DA18CT1G ideal for a broad range of applications, particularly those involving power switching and power management.

The structure of MOSFETs directly affects their performance. APTM100DA18CT1G is an enhanced version of a standard MOSFET with a thin film on the gate that produces a thin surface region between the gate and the channel. This layer significantly reduces the gate charge, making switching faster and providing better performance at higher frequencies. Furthermore, the thin film also reduces “Miller Compensation”, a condition in which a MOSFET’s gate acts like a capacitor and creates hysteresis.

Applications of APTM100DA18CT1G include H-Bridge circuits (used in motor control, DC/DC converters, and switched-mode power supply), power switching applications, and DC/DC converter applications.

The working principle of APTM100DA18CT1G can be explained as follows. A MOSFET is a three-terminal switch with its working principle analogous to a common mechanical switch. When a signal is applied to the MOSFET’s gate terminal, the signal allows electric current to flow from the source to the drain. If a signal is not applied to the gate, then electric current will not flow from the source to the drain. The total conductance of the MOSFET is determined by the gate threshold voltage.

In the case of APTM100DA18CT1G, the maximum gate–threshold voltage is 1.8 Volts. This means that any signal larger than 1.8 Volts will make the device conduct. As the gate voltage gets closer to 1.8 Volts, the channel resistance increases and electric current will not be able to flow from the source to the drain. The maximum continuous drain current for APTM100DA18CT1G is 11.2 Amps.

In summary, APTM100DA18CT1G is a MOSFET designed for power switching and management applications. It features a thin film on the gate that contributes to a faster switching time, superior performance at higher frequencies, and a reduced Miller compensation effect. Its output characteristics depend on the gate–threshold voltage. As the gate voltage gets closer to 1.8 Volts, the channel resistance increases, and electric current will not be able to flow from the source to the drain. The maximum continuous drain current for APTM100DA18CT1G is 11.2 Amps.

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