APTML20UM18R010T1AG

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APTML20UM18R010T1AG is a single enhancement mode MOSFET transistor, with a rated drain current of 20A, a maximum drain-source voltage of 20V and a package type of TO-252-3. This device has a low gate charge RDS (on) of 0.010 ohm and an ultra-low on-resistance of 18 milliohm.

Application field

The APTML20UM18R010T1AG is designed for applications where size is limited. It features low gate charge and low on-resistance, making it well suited for high frequency switching applications, such as DC/DC converters and general high speed switching circuits. It is also suitable for a wide range of other applications such as battery-operated equipment, audio/video, automotive and general purpose circuits. It is also suitable for buck converters and other applications requiring low on-resistance, low gate charge and fast switching.

Working Principle

The working principle of the APTML20UM18R010T1AG is based on the basic MOSFET principle. In this type of device, the current flow is controlled by the gate voltage. The gate voltage is used to attract charge carriers, or electrons, and form an inversion layer at the surface of the MOSFET. This inversion layer acts as a conducting channel between the drain and the source. When a positive voltage is applied to the gate, the electrons are attracted to the gate, creating an inversion layer. As the voltage applied to the gate increases, the inversion layer thickens and the current flow increases. Conversely, when the voltage applied to the gate is decreased, the inversion layer is thinned and the current flow is decreased.

The APTML20UM18R010T1AG has a low on-resistance, enabling it to draw more current than other MOSFETs with the same gate voltage. This is because the on-resistance of the MOSFET is dependent on the thickness of the inversion layer. With a thin inversion layer, the current is able to “flow” more easily, thus reducing the on-resistance.

The ultra-low gate charge of the APTML20UM18R010T1AG also helps to reduce the power consumption and increase the efficiency. This is because the gate charge is the amount of charge needed to turn the MOSFET on. When the gate charge is low, the power consumption is reduced, as less energy is needed to drive the electrons through the inversion layer.

In conclusion, the APTML20UM18R010T1AG is an excellent choice for applications requiring low gate charge and low on-resistance. It is suitable for a wide range of applications and can help to improve energy efficiency and reduce power consumption.

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