APTM10DSKM19T3G Allicdata Electronics
Allicdata Part #:

APTM10DSKM19T3G-ND

Manufacturer Part#:

APTM10DSKM19T3G

Price: $ 26.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 100V 70A SP3
More Detail: Mosfet Array 2 N-Channel (Dual) 100V 70A 208W Chas...
DataSheet: APTM10DSKM19T3G datasheetAPTM10DSKM19T3G Datasheet/PDF
Quantity: 1000
100 +: $ 23.86620
Stock 1000Can Ship Immediately
$ 26.25
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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Arrays of APTM10DSKM19T3G Transistors – What are They and How Do They Work?

APTM10DSKM19T3G transistors are some of the most versatile and desirable semiconductor components on the market today. Used in a variety of applications, these transistors are capable of highly efficient power switching and control. Moreover, these transistors come in a compact form factor, meaning they don’t take up too much important real estate on a circuit board. To further reduce the footprint of these components, manufacturers have developed arrays of APTM10DSKM19T3G transistors. These arrays replace multiple individual transistors, reducing the amount of space they take up while still maintaining their high performance characteristics.

At a basic level, APTM10DSKM19T3G transistors utilize a metal oxide semiconductor field effect transistor (MOSFET) technology. This type of transistor is well known for its low on-resistance, making it suitable for effective power control. MOSFETs use a voltage input to a gate as opposed to a current as used for other types of transistors. This allows for highly efficient switching speeds and minimal power loss. Moreover, these transistors are capable of handling large power requirements, making them a great choice for industrial and consumer electronics applications.

APTM10DSKM19T3G transistors come in a variety of form factors, including a Dual Power MOSFET array. This type of packaging combines two individual transistors in the same package, allowing for efficient and effective power switching on one circuit board. The dual-power capabilities of these transistors also provide greater flexibility in device design, meaning more design options can be achieved with fewer components. This type of array is commonly used in high-performance applications, like power supply designs and motor control circuits.

Another popular form factor of APTM10DSKM19T3G transistors is the application-specific integrated circuit (ASIC) MOSFET array. In this configuration, multiple transistors are integrated into one package, allowing for lower power consumption and compact designs. Furthermore, this type of packaging provides for an increased level of flexibility and control. Due to this, it is commonly used in applications such as DC/DC converters, high-power industrial circuits, and other applications that require sophisticated control in highly dense designs.

APTM10DSKM19T3G transistors are ideal for a variety of applications due to their versatility and high performance characteristics. Manufacturers have further improved the efficiency and design flexibility of these components by creating arrays. These arrays offer a greater degree of control, increased power delivery, and more compact designs. As a result, they have become essential components in a variety of technologies, ranging from consumer electronics to industrial applications.

The specific data is subject to PDF, and the above content is for reference

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