| Allicdata Part #: | APTM10HM09FT3G-ND |
| Manufacturer Part#: |
APTM10HM09FT3G |
| Price: | $ 56.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET 4N-CH 100V 139A SP3 |
| More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 100V 139A 390W... |
| DataSheet: | APTM10HM09FT3G Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 51.43470 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| FET Type: | 4 N-Channel (H-Bridge) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 139A |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 69.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 350nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9875pF @ 25V |
| Power - Max: | 390W |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP3 |
| Supplier Device Package: | SP3 |
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APTM10HM09FT3G is an advanced array of field effect transistor (FET) components developed by Japanese manufacturer Ricoh. It is a surface-mountable type of FET with an optimal cooling system. The device can be used to drive relatively high power in a variety of applications.
A FET is a semiconductor device used in electronics for switching and amplifying electrical signals. It is composed of a metal-oxide-semiconductor (MOS) structure between source, drain and gate terminals. The gate terminal is insulated by a thin oxide layer and a voltage applied here changes the conductivity of the underlying semiconductor channel. This property can be used to amplify electrical signals and control the output current.
Though FETs have been around for quite some time, their use in arrays is relatively more recent. Array FETs are groups of these transistors connected in parallel in order to save space and provide better performance. While the individual transistors in the array still possess their individual properties, the whole array behaves like a single larger transistor. This makes array transistors useful in applications where higher currents are required.
As mentioned before, the APTM10HM09FT3G is an array type of FET. It has a source, drain, and gate terminals. The gate voltage here controls the current flow between source and drain by opening and closing the semiconductor channel. This can be used to control the amount of power driven through the FET. The APTM10HM09FT3G has an optimal cooling system which allows the device to deliver higher power with maximum current efficiency.
One of the main applications of the APTM10HM09FT3G is for motor control. It can be used for motor starting, speed control and current limit protection. Its cooling system makes it well suited for these requirements. Robotics, automatic control and machine tools are also some of the uses of the APTM10HM09FT3G. Other applications are in amplifiers, audio equipment and medical devices.
Apart from its industrial applications, the APTM10HM09FT3G can also be used in consumer devices such as television sets, digital cameras and laptop computers. By using the APTM10HM09FT3G, device manufacturers can save valuable space and improve the performance of their products.
In conclusion, the APTM10HM09FT3G is an advanced array type FET suitable for driving relatively high power in a variety of applications. It is an efficient and reliable device with an optimal cooling system that makes it well suited for high current applications. Thanks to its wide range of use, the APTM10HM09FT combines performance and convenience in one package.
The specific data is subject to PDF, and the above content is for reference
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APTM10HM09FT3G Datasheet/PDF