APTM50UM09FAG Allicdata Electronics
Allicdata Part #:

APTM50UM09FAG-ND

Manufacturer Part#:

APTM50UM09FAG

Price: $ 243.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 500V 497A SP6
More Detail: N-Channel 500V 497A (Tc) 5000W (Tc) Chassis Mount ...
DataSheet: APTM50UM09FAG datasheetAPTM50UM09FAG Datasheet/PDF
Quantity: 11
1 +: $ 221.30000
10 +: $ 213.10600
Stock 11Can Ship Immediately
$ 243.43
Specifications
Vgs(th) (Max) @ Id: 5V @ 30mA
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 5000W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 63300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 248.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 497A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The APTM50UM09FAG is a vertical DMOS FET that is commonly used by electronic engineers and hobbyists in many different applications. This type of FET is well known for its excellent voltage withstand, allowing it to handle large load currents while keeping switching losses to a minimum. It is also very reliable, making it a popular choice for many design projects.In this article, we will be discussing the application field and working principle of the APTM50UM09FAG FET. In particular, we will focus on how it works and why it is so useful in many different designs.A FET (Field Effect Transistor) is a type of transistor which is used for controlling current. It is made up of three terminals which are the gate, drain and source. The gate acts as an input, while the drain and source are the outputs. The FET works by allowing current to flow from the drain to the source when a voltage is applied to the gate. The amount of current that can flow from the drain to the source is determined by the amount of voltage applied to the gate.The APTM50UM09FAG is a vertical DMOS FET (Double-diffused MOSFET) which is a type of FET built on a single layer of silicon substrate. It is commonly used in power electronic designs due to its ability to handle large current and high switching speeds. It can also withstand large load currents while still maintaining its switching performance.In terms of its application field, the APTM50UM09FAG is suitable for a variety of applications such as electric vehicles, power amplifiers, motor drives, power control circuits, DC/DC converters, and so on. It is also frequently used as gate drivers in high power applications such as electric power steering systems and solar inverters.The APTM50UM09FAG works by allowing current to flow from the drain to the source when a voltage is applied to the gate. This is because the gate acts as a capacitor, which stores electric charge when a voltage is applied. This charge then polarizes the FET, which in turn allows current to flow from the drain to the source. This is known as the Charge-transfer Principle and is the basic working principle of the APTM50UM09FAG FET.Finally, it is important to note that the APTM50UM09FAG FET is a specific type of FET that has very specific characteristics. Therefore, it is important to understand the specific requirements of the application before using the FET. As such, the engineer should take into consideration factors such as the voltage levels, current requirements, and switch speed in order to ensure a successful application.Overall, the APTM50UM09FAG is an excellent choice for many electronics applications due to its excellent voltage withstand and its high switching speed. Its reliable performance and wide application field make it a popular choice among engineers and hobbyists alike. By understanding its application fields and working principles, one can gain a better understanding of how the APTM50UM09FAG FET can be used to their benefit in a variety of design projects.

The specific data is subject to PDF, and the above content is for reference

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