
Allicdata Part #: | APTM50H15FT1G-ND |
Manufacturer Part#: |
APTM50H15FT1G |
Price: | $ 24.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 500V 25A SP1 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 500V 25A 208W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 22.04440 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 25A |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5448pF @ 25V |
Power - Max: | 208W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
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The APTM50H15FT1G is an array of Field-Effect Transistors (FETs) commonly used in various electronic application fields. These parts consist of two connecting arrays, a lower FET array and an upper FET array. This type of transistor array holds a great importance due to its ability to save area in any given system.
The APTM50H15FT1G is primarily used as a load switch or as part of an automated level control system, such as in automotive applications. As it can be used in a wide array of applications, it’s commonly used in the industrial, automotive, computer, telecommunications, and aerospace sectors. As the part is available in different package types, it can be used depending on the specific requirement.
The growth of the electronics industry has caused an increase in the number of appications that the APTM50H15FT1G can be used in.These applications include powering battery backup circuits, controlling voltage regulators and current amplifiers, providing power regulation and control in gate-level logic and other related circuits, and performing as a multiplexer, a crossbar switch, or an array in data processing applications. Additionally, this part is used in cellular communications applications and automotive motor switching.
The working principle of the APTM50H15FT1G is based on the physical phenomenon of electrostriction, the transfer of electrical energy directly into mechanical energy, and vice versa. This energy transfer is done through what’s known as a ‘channel’, and it’s this part of the FET array’s structure that determines how much current can pass when the part is switched on. To put it simply, the APTM50H15FT1G works by opening or closing the ‘channel’ when it is switched on and off respectively.
The FET’s internal structure consists of two semiconductor layers, which contain the source region, the drain region, and the gate region. Within the gate region, a charge can be induced, allowing electrical current to pass through the conducting channel present between the source and drain regions. The highest voltage can theoretically be applied to the gate region, resulting in a high current flow between the source and drain regions. This way, the APTM50H15FT1G can be used to switch on and off a wide range of current levels in various circuit designs.
The APTM50H15FT1G is an array of FETs that are capable of controlling high current levels in various applications. This part can be used in both industrial and automotive, computer, telecommunications, and aerospace applications. The working principle of the part is based on electrostriction, and this is done by opening and closing the ‘channel’ present between the source and drain regions. This allows for the creation of a conducting path, allowing current to flow between the two regions. As such, the APTM50H15FT1G is a useful and reliable component in many different appliances and applications.
The specific data is subject to PDF, and the above content is for reference
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