APTM60A11FT1G Allicdata Electronics
Allicdata Part #:

APTM60A11FT1G-ND

Manufacturer Part#:

APTM60A11FT1G

Price: $ 25.91
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 600V 40A SP1
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 600V 40A 39...
DataSheet: APTM60A11FT1G datasheetAPTM60A11FT1G Datasheet/PDF
Quantity: 1000
100 +: $ 23.55770
Stock 1000Can Ship Immediately
$ 25.91
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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The APTM60A11FT1G is an integrated circuit (IC) known as a field-effect transistor (FET) array. This is a type of transistor that is formed from an array of FETs, that can be configured for a variety of uses and is commonly used in the electronic industry. This type of IC is designed for a wide range of applications, including radio communications, cellular phones, satellite circuitry and power switching.

FETs are available in discrete and array configurations and offer higher performance, more flexibility and are more cost-effective than traditional bipolar junction transistors (BJTs). FETs are commonly used in the design of many types of analog and digital circuits, thanks to their unique properties of high input impedance, low power consumption and low noise levels. FETs are used in both linear and switching circuits, such as RF amplifiers, power switching circuits, control circuits, and so on.

An array FET, such as the APTM60A11FT1G, is a group of individual FETs that are interconnected together in an integrated circuit. This type of arrangement allows for higher density, improved performance, more flexibility, and more cost efficiency than if each FET were physically separated. Some of the advantages of using an array FET are the ability to configure the FETs in various combinations to adjust the gain characteristics, impedance matching or to optimize the gain bandwidth product. It also allows for the flexibility to use the FETs either in series or parallel depending on the desired design.

The working principle of the APTM60A11FT1G is similar to that of other FETs. FETs use voltage across their gate and source elements to control the current flow through the conducting channel between the drain and source. This type of current control gives them their high input impedance. The gate voltage determines the current flow in the channel, with higher gate voltages resulting in more current. Conversely, decreasing the gate voltage decreases the current flow. By varying the gate voltage, the FET can be used for a variety of applications.

The APTM60A11FT1G is most commonly used in power switching applications. Such applications include switching circuits and other power related requirements, such as regulating the output of a DC/DC converter, or current limiting circuits. Additionally, the APTM60A11FT1G can also be used for RF applications, such as amplifiers or modulators. Other possible uses include control and protection circuits, as well as various other analog and digital circuit designs.

In conclusion, the APTM60A11FT1G is an array FET, which offers a number of advantages over other types of transistors. With its higher degree of performance, greater flexibility, and lower cost when compared to BJTs, it can be an ideal choice for many applications. Its ability to be used in various circuit configurations, as well as its range of uses in both analog and digital circuits, makes it a valuable and versatile component.

The specific data is subject to PDF, and the above content is for reference

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