APTM50HM65FTG Allicdata Electronics
Allicdata Part #:

APTM50HM65FTG-ND

Manufacturer Part#:

APTM50HM65FTG

Price: $ 72.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 4N-CH 500V 51A SP4
More Detail: Mosfet Array 4 N-Channel (H-Bridge) 500V 51A 390W ...
DataSheet: APTM50HM65FTG datasheetAPTM50HM65FTG Datasheet/PDF
Quantity: 1000
100 +: $ 65.68880
Stock 1000Can Ship Immediately
$ 72.26
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Description

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APTM50HM65FTG is a type of metal oxide semiconductor field effect transistor (MOSFET) array, which is used in many electronic applications. It is composed of a number of vertical channels and one or two gates, depending on its application. The gates are the control elements of the array, and each of them can be programmed independently to allow different voltages and currents to flow through the array.

In general, the primary application of APTM50HM65FTG is in the field of digital logic where it is used to construct digital logic circuits. The digital logic circuits are composed of a number of gate arrays which are responsible for implementing some specific logic. These gate arrays are programmed using a suitable programmable logic device (PLD), which contains the instruction set to be loaded into each of the gate arrays. The APTM50HM65FTG can be used in this context as a PLD for complex logic operations.

In addition to its use in digital logic, APTM50HM65FTG can also be used for power switching applications. The use of such arrays for power switching has the advantage of providing a high level of control over the output current and voltage, which makes it suitable for use in a variety of power management applications. In addition, the arrays can also be used for current sensing, voltage sensing and temperature sensing applications. This makes it particularly suitable for applications where the control of currents and voltages is required.

The working principle of APTM50HM65FTG relies on the concept of electric field effect. This effect is based on the interaction between the electric voltage applied to a gate and a metal oxide semiconductor (MOS) structure. When a suitable electric field is applied to the gate, the MOS structure modulates the current that can flow through it. This allows the user to control the amount of current that can be delivered to the electrical circuit, thus providing precise control over the output of the array.

The APTM50HM65FTG array is composed of a number of electrically isolated vertical channels, which allow the user to select the desired voltage and current according to the application. Each channel can be programmed independently, allowing for a wide range of power management applications. In addition, the array has the ability to sense changes in temperature, current and voltage, allowing a greater degree of control over the output capabilities of the array.

The APTM50HM65FTG array is becoming increasingly popular in a variety of applications due to its flexible design and easy programming. Its ability to provide precise control over output voltage and current makes it suitable for a wide range of applications, from digital logic to power management. It is an excellent choice for applications where precise control is required.

The specific data is subject to PDF, and the above content is for reference

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