APTM100H35FT3G

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APTM100H35FT3G is a part of power MOSFETs and belongs to the Array family. Array MOSFETs consist of multiple MOSFETs packaged in an array arrangement and are capable of handling high current levels. The APTM100H35FT3G is one of the most popular array MOSFETs.

The APTM100H35FT3G is a low-cost drive MOSFET array developed with advanced ultra thin oxide technology for driving applications. The array consists of 2-4 identical MOSFETs with the same drain and gate terminal connected together. This design allows for cost savings and improved power density compared to traditional discrete MOSFETs. The APTM100H35FT3G also offers lower on-resistance and higher switching speed than its discrete counterparts.

The APTM100H35FT3G has an array of two transistors, two of which are N-type MOSFETs and one of them is a P-type MOSFET. The P-type MOSFET is used as the main switching device while the N-type MOSFETs provide body diodes for protection against inductive and reverse biased loads. The series-connected N-type MOSFETs increase the drain to source breakdown voltage, making the device suitable for high-voltage, medium-power applications. The small form factor of the APTM100H35FT3G makes it ideal for space-constrained applications, such as automotive electronics and UAVs.

The APTM100H35FT3G has a wide range of applications including, DC-DC converters, industrial motor controls, lighting and consumer electronics. The device is capable of switching high currents and providing a high degree of robustness against transient load conditions. It can also be used for power amplification applications, such as RF amplifiers. The APTM100H35FT3G is a reliable and cost-effective solution for high-power motor control, DC power supply, and power amplification applications.

The working principle of the device is quite simple. At the gate, a voltage is applied to the device and a current flows through the MOSFETs. This current is an alternating current whose direction is determined by the polarity of the applied voltage. When the voltage at the gate is of the same polarity as applied voltage, the MOSFETs will be turned on and a current will flow through the device. On the other hand, when the voltage at the gate is of the opposite polarity, the MOSFETs are turned off and no current flows. This process is what is known as DC switching.

In conclusion, the APTM100H35FT3G is a low-cost drive MOSFET array suitable for a wide range of applications, including DC-DC converters, motor controls, power amplification, and RF amplifiers. The array provides lower on-resistance and higher switching speed than other discrete counterparts and the simple operation makes it a reliable cost-effective choice for various high-power applications.

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