Allicdata Part #: | APTM10DSKM09T3G-ND |
Manufacturer Part#: |
APTM10DSKM09T3G |
Price: | $ 36.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 100V 139A SP3 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 139A 390W Cha... |
DataSheet: | APTM10DSKM09T3G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 33.28320 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 139A |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 69.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 350nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 9875pF @ 25V |
Power - Max: | 390W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
APTM10DSKM09T3G application field and working principle
The APTM10DSKM09T3G is a transistor array of 10 ultra low-voltage (2.1-2.5V) MOSFETs with patent-pending active FET Guard technology. The device is perfect for a variety of industrial and consumer applications such as power management, audio, medical, and automotive.
MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors, are three-terminal field-effect transistors used for amplification and switching applications. They are most effective by having a low on-state resistance and a low "gate-source" turn on voltage. The APTM10DSKM09T3G is designed with 10 integrated FETs that help reduce the overall component count while providing better performance.
The APTM10DSKM09T3G is designed with a removable "active FET guard" which helps to reduce cross-talk and leakage between FETs on the same power line. This technology offers the user better reliability, improved signal integrity, and enhanced frequency response. The APTM10DSKM09T3G can operate in both single-ended and dual-ended configurations, providing a high level of flexibility for a variety of applications.
The working principle of the APTM10DSKM09T3G is based on the operation of a field effect transistor. A field effect transistor can operate as an amplifier, where a single input voltage is used to control the direction of current flow between the source and drain. The gate terminal of the field effect transistor controls the current flow, and when a positive voltage is applied to the gate, the transistor is switched on and current can flow from source to drain.
The APTM10DSKM09T3G uses its active FET guard technology to help reduce cross-talk and leakage. This is achieved by monitoring the current flow in each FET, and if the current flow exceeds a certain threshold, the guard will activate and reduce the current flow. This helps to ensure that the FETs are operating properly, and that the device is functioning reliably.
The APTM10DSKM09T3G is ideal for industrial, consumer, and automotive applications that require low on-state resistance and high signal integrity. The patent-pending FET guarding technology helps improve reliability, as well as signal integrity, without increasing component count or PCB size. Its low-voltage operation and removable guard make it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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