| Allicdata Part #: | APTM50AM38FTG-ND |
| Manufacturer Part#: |
APTM50AM38FTG |
| Price: | $ 65.92 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET 2N-CH 500V 90A SP4 |
| More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 500V 90A 69... |
| DataSheet: | APTM50AM38FTG Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 59.92760 |
| Series: | POWER MOS 7® |
| Packaging: | Bulk |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 500V |
| Current - Continuous Drain (Id) @ 25°C: | 90A |
| Rds On (Max) @ Id, Vgs: | 45 mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 246nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 11200pF @ 25V |
| Power - Max: | 694W |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP4 |
| Supplier Device Package: | SP4 |
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APTM50AM38FTG is an advanced MOSFET array which belongs to the family of field effect transistors (FETs). It is mainly used in power conversion and control applications, and its combination of high efficiency and low on-state resistance makes it an ideal device for a wide array of switch-mode power supplies and control circuits. The APTM50AM38FTG is an enhancement type of transistor, which means it can be used as an active switch. Its main parameters are drain to source breakdown voltage, Vds, gate to source threshold voltage, Vgs and on-state drain current, Id.
The APTM50AM38FTG’s field of application is the areas of power supplies, robotics, motor speed control and data acquisition. Its integrated circuit (IC) configuration allows for easy management of both the current range and temperature range. Because it can be used within wide temperature ranges, ranging from -55°C to +150°C, it can withstand higher currents and voltages, while providing higher efficiency than traditional, non-enhanced FETs.
The MOSFET array consists of three MOSFETs arranged in a cascade configuration, meaning that each transistor is connected to the next, in a ‘daisy chain’, as it were. The first transistor is the input, or gate, and it is used to control the second transistor, which is the output, or drain. The third transistor is then used as the output, or source, and it effectively connects the whole circuit together. The three transistors are connected in series, resulting in the cascading effect and providing for a precise, linear output.
The working principle of the APTM50AM38FTG is based on the ‘Threshold Voltage-Transfer curve’ of the output transistor, forming an adjustable ‘on-state resistance’. When the gate voltage (Vgs) is set to the desired value, the drain and source transistors are ‘opened’. The drain current (Id) is then proportional to the current flowing through the gate. By adjusting the gate voltage, the on-state resistance, and thus the output voltage, can be controlled between 0 and the product of the threshold voltage and current.
The APTM50AM38FTG is an important component in a variety of complex power systems. Its combination of low on-state resistance and high efficiency makes it extremely powerful and reliable. Its ability to be used in different temperature ranges allows for the safe operation of a wide range of electrical systems. The integrated configuration also makes it easier to manage the current range and temperature range. These advantages make it the ideal solution for a variety of power conversion and control applications.
The specific data is subject to PDF, and the above content is for reference
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APTM50AM38FTG Datasheet/PDF