
Allicdata Part #: | APTML60U12R020T1AG-ND |
Manufacturer Part#: |
APTML60U12R020T1AG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 45A SP1 |
More Detail: | N-Channel 600V 45A (Tc) 568W (Tc) Chassis Mount SP... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 568W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 25V |
Vgs (Max): | ±30V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 22.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The APTML60U12R020T1AG is a single-gate field-effect transistor (FET) offering several advantages over traditional transistors and making it suitable for various types of applications. This MOSFET device features a low-turn-on threshold voltage of 5V, a maximum drain-source breakdown voltage (VDS) of 30V and a drain-source on-state resistance (RDSon) of 0.14Ohm. These characteristics allow it to be ideal for use in applications in which low drive power, low switching power dissipation and high efficiency are important.
The APTML60U12R020T1AG single-gate FET can be used in a wide variety of applications. These include power supply sequencing, power supply designs, linear control of small loads, and low-side switching (such as motor, light, and heater controls). The device\'s low drive power, low on-resistance, low noise and low capacitance characteristics make it well-suited for use in powering up LCD displays, accumulating and storing data, interfacing low-power analog signals, and controlling motors.
At the same time, the APTML60U12R020T1AG is an ideal choice for automotive applications such as high-efficiency LED lighting control and starter motor switching. It is also an excellent device for power supply management in point-of-load power converters for computing applications, such as CPU core voltages and system clock synchronization. The device is designed for high-efficiency, high-speed switching designs.
The APTML60U12R020T1AG single-gate FET is also suitable for use in a variety of medical device applications, such as implantable medical devices, portable medical electronics, body composites and bio-imaging. Its low leakage current, low on-state resistance, fast turn-on time, and low capacitance characteristics make it particularly suitable for low-power circuitry.
The working principle of the APTML60U12R020T1AG FET is based on the gate being used as an electrical switch. In its simplest form, the operation of a FET follows the same principles as a mechanical switch: when the gate is “on”, current flows through the FET from the drain to the source, and when the gate is “off”, the path is blocked. The main difference between a FET and a mechanical switch is that with a FET, the gate is used to control the current flow, so that the current is not steady. The gate can be used to adjust the amount of current that flows through the FET from the drain to the source.
The APTML60U12R020T1AG single-gate FET is an efficient, low-power device that is suitable for a wide range of applications. Its low-turn-on threshold voltage, high breakdown voltage and low on-state resistance provide excellent efficiency. The device’s fast turn-on and turn-off times make it ideal for use in high-speed switching applications, while its low-leakage characteristics make it suitable for use in high-efficiency power supply control.
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