APTM50HM75FTG Allicdata Electronics
Allicdata Part #:

APTM50HM75FTG-ND

Manufacturer Part#:

APTM50HM75FTG

Price: $ 66.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 4N-CH 500V 46A SP4
More Detail: Mosfet Array 4 N-Channel (H-Bridge) 500V 46A 357W ...
DataSheet: APTM50HM75FTG datasheetAPTM50HM75FTG Datasheet/PDF
Quantity: 1000
100 +: $ 60.37000
Stock 1000Can Ship Immediately
$ 66.41
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 46A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Description

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The APTM50HM75FTG array is a type of transistor array utilized in the field of electrical engineering. Known as a type of Field Effect Transistor (FET), the APTM50HM7FTG is a Metal Oxide Semiconductor FET, commonly referred to as a MOSFET. FETs, and particularly MOSFETs, have an array of advantages that are leveraged to create various applications within circuitry. The APTM50HM7FTG is no different, and its application fields and working principles make it a uniquely useful device for a variety of purposes.

FETs in general, and MOSFETs specifically, are useful electronic components due to the fact that they are unipolar devices. This means that current does not need to be conducted by both majority and minority carriers as it did with conventional bipolar transistors, allowing for significantly lower power consumption and greater efficiency. The FET is thus able to perform many tasks with a higher level of accuracy and precision than other types of transistors.

The unique properties of MOSFETs such as the APTM50HM7FTG make the device well-suited for application fields such as switching circuits, voltage regulation, and analog signal processing. It is important to note that, unlike other types of FETs, the APTM50HM7FTG is an array which means that it contains multiple transistors on a single piece of silicon, thus enabling it to accomplish significantly more complex and versatile tasks than single-FET devices.

The working principles of the APTM50HM7FTG array can be simplified into two basic processes. First, the voltage of the drain determines the flow of current through the transistor and the type of electronic switching that occurs. This is done primarily by altering the threshold voltage, which is controlled by adjusting the gate potential of the transistor with respect to the source voltage. Second, the array is designed with a variety of materials, such as silicon and metals, to ensure that the devices can accommodate temperatures within the operating range.

Because of its unique properties, the APTM50HM7FTG is a highly versatile and reliable device that is well-suited for many different applications. It can be used in a variety of electrical engineering projects, including power management, switching, and other circuitry tasks. Additionally, its ability to accommodate a variety of temperatures and voltages allows for greater versatility and efficiency in comparison to other FETs and transistors. Thus, the APTM50HM7FTG array is an invaluable tool for those looking for a reliable, efficient, and multi-purpose device for electrical engineering projects.

The specific data is subject to PDF, and the above content is for reference

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