Allicdata Part #: | APTML50UM90R020T1AG-ND |
Manufacturer Part#: |
APTML50UM90R020T1AG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 52A SP1 |
More Detail: | N-Channel 500V 52A (Tc) 568W (Tc) Chassis Mount SP... |
DataSheet: | APTML50UM90R020T1AG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 568W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 25V |
Vgs (Max): | ±30V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 108 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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APTML50UM90R020T1AG is a type of MOSFET (metal-oxide-semiconductor field-effect transistor). It is a single-FET transistor used in applications requiring high frequency (greater than 500MHz) switching voltage and current. It is made of a four-terminal structure composed of source, gate, drain and substrate.
The APTML50UM90R020T1AG is a N-Channel Enhancement Mode MOSFET that boasts excellent switching characteristics and high input impedance. This is possible thanks to its advanced structure having two N channels connected in parallel in order to increase the operating speed and reduce on-resistance. The dielectric material between gate and channel is made of silicon nitride which is an ideal choice for its excellent stability, thermal resistance, and frequency characteristics.
When it comes to its working principle, the APTML50UM90R020T1AG operates by using a voltage applied to the gate to control the current between the source and drain. This is because when a positive voltage is applied to the gate, an electric field forms across the oxide between the gate and channel, resulting in a depletion of charge carriers near the gate. This depletion of charge carriers modulates the conductivity of the channel allowing current to pass through the source and drain. Conversely, when a negative voltage is applied to the gate, the electric field formed repels the charge carriers resulting in no current passing through the source and drain.
The APTML50UM90R020T1AG’s primary application field lies in high frequency switching applications such as automotive(including ignition and A/C systems), consumer electronics, microwave/millimeter-wave transmitters and many others. The transistor also has superb signal isolation and excellent temperature and thermal stability, which add to its reputation as an excellent signal transducer. Furthermore, its 3-pin configuration is capable of delivering up to a maximum of 1A of continuous drain current which makes it ideal for many consumer application like remote control, power supply, PCs and TVs.
In conclusion, the APTML50UM90R020T1AG is an excellent choice for applications needing high frequency switching, signal isolation, excellent temperature and thermal stability and high input impedance. Its single-FET structure also makes it a great choice for many consumer electronics while its 3-pin configuration allows it to deliver up to a maximum of 1A of continuous drain current.
The specific data is subject to PDF, and the above content is for reference
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