Allicdata Part #: | APTM20AM08FTG-ND |
Manufacturer Part#: |
APTM20AM08FTG |
Price: | $ 70.66 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 200V 208A SP4 |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 200V 208A 7... |
DataSheet: | APTM20AM08FTG Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 64.23610 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 208A |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 104A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 14400pF @ 25V |
Power - Max: | 781W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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Transistors are widely used in modern technology due to their unmatched abilities to amplify, switch, and control electrical signals. Field effect transistors (FETs), and specifically Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), are now widely used as building blocks in many different applications. In particular, MOSFET arrays are used in a variety of discrete and integrated circuits.
The APTM20AM08FTG is a low-power MOSFET array composite transistors, which offers a wide range of features. It is designed to supplement and enhance existing logic circuits through energy efficiency and robust operation. With a total gate charge of 8nC, combined with a very low RDSon value and a 100mA source/sink drive strength, this device is ideal for applications that require low-power or low-voltage operation. The device also features an integrated ESD protection network.
The APTM20AM08FTG can be used for a variety of purposes and applications. Due to its low gate charge and low RDSon values, it is suitable for use in power management, voltage regulation, and motor control. Additionally, the device is useful in power semiconductor applications and switching power sources, as it can handle the high current and voltage demands of these applications. The high source/sink drive strength makes it a suitable device for driving high current loads.
The working principle of the APTM20AM08FTG is based on the behavior of a MOSFET. MOSFETs generally act as a three-terminal device, where a voltage applied to one terminal (the gate) will control the flow of current between two other terminals (the source and drain). In the case of the APTM20AM08FTG, the source is connected to ground, and the drain is connected to the voltage or current source. The gate terminal is then connected to the logic circuit, which will determine the voltage or current that is allowed to pass between the source and the drain.
When the logic circuit supplies a logic level low-voltage signal to the gate, the APTM20AM08FTG will remain in an OFF state. However, when the logic level voltage is high, the gate allows the source-drain current to flow, switching the device ON. This process is known as \'enhancement mode\', and is the main mechanism of operation for MOSFETs. This is the basic working principle of the APTM20AM08FTG.
The APTM20AM08FTG MOSFET array is a powerful and versatile device, capable of performing a variety of low-voltage and power management functions. Its low gate charge, low RDSon values, and integrated ESD protection network make it optimal for high-current and power management applications. In addition, its simple operating principle makes it a great choice for many different types of circuits and projects.
The specific data is subject to PDF, and the above content is for reference
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