APTM100DSK35T3G

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APTM100DSK35T3G is a part model from Electronic Components Corporation (ECC), a renowned global supplier and manufacturer of high-quality electronic products, components and solutions. It is of special interest due to its application field and working principle, which are described in this article.

What is APTM100DSK35T3G?

APTM100DSK35T3G is an integrated array of high-speed field-effect transistors (FETs-MOSFETS) designed by ECC with the capability to operate in electric fields up to 100 V. This part has been specifically created to satisfy the demand of integrated circuits with high-performance switching applications.

Its features include a gate configuration with a number of polysilicon layers combined with six FET cells in a single die, and a genuine polyacetal construction. Its structure also incorporates gold Titanium power contacts, with an optimal combination of on-resistance and ESD protection.

Despite its complexity, APTM100DSK35T3G integrates most of the components found in a MOSFET and, at the same time, helps to reduce EMI and power loss. With identical configurations, the gate FETs provide a faster switching response in comparison to a single FET. This, in combination with its high reliability and thermal resistance values, gives it the necessary credentials for high-speed applications.

APTM100DSK35T3G application field and working principle

APTM100DSK35T3G is used by many of today\'s leading industries, such as automotive, wireless and consumer electronics, PC motherboards, and communications products. This model is ideal for replacing discrete MOSFETs in higher current applications, as it provides superior electrical parameters such as voltage ratings and current ratings, necessary for reliable operation.

Its typical application fields include switch mode power supplies, ac motors, fan control, and high current synchronous rectification. When used in a voltage source converter, for example, the integrated array of high-speed FETs can provide higher power efficiency and faster response time compared to the discrete MOSFET.

The working principle of the APTM100DSK35T3G is based on the electrostatic fields created by the electrons in the gate region. When a positive voltage is applied to the gate terminal, a potential barrier is created. This potential barrier allows electrons to flow only in a single direction, thus creating a controlled current through the device.

The operating principles combined with its advanced design make it suitable for many power applications. Its uniquely designed construction and the addition of the Gold Titanium contact makes it the ideal choice for devices with high-current switching and ESD protection.

Conclusion

APTM100DSK35T3G is a unique and highly reliable integrated array of high-speed FETs manufactured by Electronic Components Corporation. It is highly efficient for worldwide applications such as automotive, wireless and consumer electronics and can be used in various high-current applications including switch mode power supplies, ac motors, fan control and high current synchronous rectification.

Apart from its high performance, this part is also reliable and economical, offering a low on-resistance and excellent ESD protection. Its design is also well suited for a variety of industrial and consumer applications, making it a great choice for designers wanting to utilize the most up-to-date power technology.

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