
Allicdata Part #: | APTM50AM35FTG-ND |
Manufacturer Part#: |
APTM50AM35FTG |
Price: | $ 71.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 500V 99A SP4 |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 500V 99A 78... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 65.26170 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 99A |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 49.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 14000pF @ 25V |
Power - Max: | 781W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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APTM50AM35FTG is a relative high-powered array of MOSFET transistors commonly used in power applications. It is a three-transistor array with extremely low "on" resistance and capable of handling up to 35 amperes of current. The array is comprised of three N-channel enhancement-mode MOSFETs (metal-oxide semiconductor field-effect transistors) with a high gain capability of 1.75microamp/TmP. The array is designed to provide high switching performance and low-power dissipation in switching applications.
The APTM50AM35FTG array is used in a variety of applications, including power converters, DC-to-DC converters, lighting controls, motor control, climate control, and other industrial process controls. The array works well in environments where accuracy and reliability are key, such as medical and network communication systems. It can be used to switch solar energy sources, control motor speeds and generate AC current for industrial applications.
The APTM50AM35FTG array is also very well suited for applications that require high power, such as medical imaging and satellite navigation. With its low “on” resistance and high gain, this array is capable of switching up to 35 amperes of current and providing extremely fast switching time. As a result, it can be used in systems that require precise control and high-speed switching, such as laser systems and CCD cameras.
The working principle of the APTM50AM35FTG array is based on the electron field effect. When a potential difference is applied to the gate, an electric field is generated that changes the electron density in the channel, which in turn affects the current flowing through the channel. By controlling the flow of electrons through the channel, the transistor can be used to switch between “on” and “off” states. The low resistance of the array allows it to switch quickly and accurately, making it ideal for applications that require precise control over current.
The APTM50AM35FTG array is a reliable and efficient solution for applications that require high current switching capabilities and fast response times. With its unique three-transistor design, it provides excellent power efficiency and is capable of switching up to 35 amperes of current. Furthermore, its low “on” resistance and high gain make it an ideal choice for applications that require precise control and fast switching times. This MOSFET array is sure to meet the needs of many power-related applications.
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