Allicdata Part #: | AUIRF1010Z-ND |
Manufacturer Part#: |
AUIRF1010Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 75A TO220AB |
More Detail: | N-Channel 55V 75A (Tc) 140W (Tc) Through Hole TO-2... |
DataSheet: | AUIRF1010Z Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 75A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRF1010Z is a type of insulated gate bipolar transistor, also known as an IGBT. It is a transistor with two terminals, a gate, and a source. IGBTs are renowned for their low on-state voltage and high frequency operation. Their development ushered in a new era of efficient and effective power management systems, revolutionizing the way that power electronics are designed and implemented.
The AUIRF1010Z is capable of even higher frequency switching than typical MOSFETs and its design is optimized to provide superior performance and exceed the requirements of modern power electronics. With an ultra low on-state voltage of 1.25V, the AUIRF1010Z has a remarkably low gate charge that greatly reduces switching losses. This transistor is also capable of withstanding high peak and reverse voltages, making it suitable for a wide range of power management applications.
The AUIRF1010Z is primarily used for power circuit designs and its applications include electric motor control, UPS systems, LED lighting, solar inverters, automotive lighting, and audio amplifiers. The AUIRF1010Z is an excellent choice for high current and frequency switching applications, as it utilizes its ultra low on-state voltage and high peak voltage ratings to provide superior performance. Additionally, its low gate charge makes it suitable for use in high frequency switching applications.
The working principle of the AUIRF1010Z is based on the ability of an insulated gate to control an electric current through a channel comprised of lightly-doped N-type and P-type materials. Using a positive voltage, the gate voltage creates an electric field that attracts carriers, creating a current between the source and the drain. The insulated gate then controls the current through the channel, allowing it to either turn the current on or off or to adjust its strength. This is how the AUIRF1010Z is able to effectively switch current on and off in a variety of power electronics applications.
In conclusion, the AUIRF1010Z is a major advancement in power management systems. Its low on-state voltage and high frequency operation allow it to outperform traditional power transistors and meet the needs of modern power electronics. Its ability to withstand high peak and reverse voltages make it suitable for a wide range of applications, including electric motor control, LED lighting, UPS systems, and audio amplifiers. Its working principle is based on the ability of an insulated gate to control the flow of an electric current. The AUIRF1010Z is the perfect choice for power circuit designs that require high current and frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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