AUIRF2804STRL

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The AUIRF2804STRL is a P-channel enhancement-mode laterally diffused MOSFET (L-DMOSFET) that offers robust and wide range performance for applications in various industries. This MOSFET is compatible with a wide range of logic levels and is manufactured with a silicon dioxide layer, which makes it ideal for extreme environment applications that require high-temperature and high-voltage operation. Furthermore, its low capacitance and high-efficiency are perfect for product designs that require a continuous performance even in adverse conditions.

The AUIRF2804STRL is primarily used in portable and automotive applications, such as monitors, displays, DC-DC power conversion, as well as motor control and power management. It is also suited to industrial and military applications where high temperature and high voltage operation is required. Moreover, it can be used in a single-ended or dual-ended arrangement for various applications.

The AUIRF2804STRL utilizes a number of technologies to maximize performance and reliability. It has been designed to be highly rugged, and its high on-state drain current rating, high power consumption, low reverse current leakage, and fast switching speeds help to make it ideal for applications in harsh environments. Additionally, its low input capacitance also helps to reduce switching loss and makes it suitable for high-efficiency applications. Furthermore, its large structure capacity is ideal for handling large current pulses in high-frequency switching.

The AUIRF2804STRL has a depletion mode type of operation, meaning that it acts as a switch when the gate voltage is lower than the drain voltage, and no current is flowing through the device. However, when a voltage signal is applied to the gate, the device starts to conduct current, in a phenomenon known as enhancement mode operation. Its wide operating range allows it to handle drain voltages up to 600V, with a maximum drain current rating of -14A. Furthermore, it is also capable of fast switching, with turn-off times of 1µs and turn-on times of 2µs. Finally, its low capacitance ensures that its power consumption is low.

The AUIRF2804STRL is an ideal solution for a variety of applications, from portable to industrial and from automotive to military. As it is manufactured with silicon dioxide, it is particularly well suited to high temperature and high voltage operation. Furthermore, its low capacitance and high operating capabilities make it ideal for efficient and reliable operation. To conclude, with its robust performance, wide range of uses, and ease of use, the AUIRF2804STRL is an excellent choice for those looking for reliable, high-performance L-DMOSFETs.

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