| Allicdata Part #: | AUIRF3007-ND |
| Manufacturer Part#: |
AUIRF3007 |
| Price: | $ 1.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 75V 80A TO-220AB |
| More Detail: | N-Channel 75V 75A (Tc) 200W (Tc) Through Hole TO-2... |
| DataSheet: | AUIRF3007 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.13000 |
| 10 +: | $ 1.09610 |
| 100 +: | $ 1.07350 |
| 1000 +: | $ 1.05090 |
| 10000 +: | $ 1.01700 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3270pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 12.6 mOhm @ 48A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tube |
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The AUIRF3007 is an advanced high-performance field-effect transistor (FET) that enables high-performance power control applications. It is an N-channel MOSFET constructed with an insulated-gate field-effect transistor (IGFET) technology. The AUIRF3007 has very low input capacitance and a very low on-resistance in order to provide high-speed power control when used in a variety of power management applications.
The AUIRF3007 is designed for applications that require high current operation and low-noise operation. The high-side logic level gate drive capability is ideal for controlling switching supplies, converters, or other power control applications. It is also designed for use in high-frequency, high-power switching applications. The high-current feature allows the AUIRF3007 to be used at higher currents and higher temperatures than other FETs.
The AUIRF3007’s input gate is driven by an external control signal that is low-amplitude, high-frequency, and self-clocking. The AUIRF3007 has a wide operating voltage range and can be used in applications with a wide range of input voltages. The AUIRF3007 is RoHS-compliant and is available in a wide variety of packages and manufacturing options.
The AUIRF3007’s working principle is based on the fact that when a voltage is applied to a conductive gate of a field effect transistor, a conducting channel is created between the source and the drain. The width of the conducting channel is regulated by the gate voltage. This control of the conducting channel enables current control. The AUIRF3007 utilizes N-channel technology to provide high speed, low power dissipation and low on-resistance.
The AUIRF3007 is most commonly used for power management applications such as DC-DC converters, switching power supplies, battery management, motor control, and other industrial applications. The advantages of the AUIRF3007 include low on-resistance, low input capacitance, high-side gate drive capability, and RoHS compliancy. The AUIRF3007 is also available in a wide variety of packaging options, including industry standard SOT-23 and PowerPAK packages.
The AUIRF3007 is an ideal choice for applications requiring low power loss, high efficiency, and fast switching speeds. The wide operating voltage range, low on-resistance, and compact size make the device suitable for a variety of industrial and consumer applications. In addition to its excellent performance in controlling power switches, the AUIRF3007 is also a suitable device for applications that require low-noise operation, such as audio amplifiers and switching regulators.
The specific data is subject to PDF, and the above content is for reference
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AUIRF3007 Datasheet/PDF