AUIRF7640S2TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AUIRF7640S2TR is an advanced N-channel MOSFET manufactured by International Rectifier and voted number one in power MOSFETs. This product offers some of the best features and performance properties in the market. It is optimized for low on-resistance, high power handling and switching speed.

Application Field

The AUIRF7640S2TR is a high-performance P-channel Power MOSFET, with low on-resistance, high power handling, and switching speed. It finds wide applicability in automotive and industrial motor control, DC-DC converters, switching regulators, and driver circuits.

The device can also be used in audio and video applications, such as line-level and power amplification in TVs and home audio systems. It is an excellent choice for pulse-width modulated (PWM) circuits as it has a tight RDS(on) tolerance at elevated temperatures. Moreover, the device has a maximum continuous drain current rating of 25A, a VGS Max rating of ±20V and a maximum drain-source breakdown voltage of 60V.

Working Principle

The AUIRF7640S2TR is an N-channel MOSFET and works on a basic principle. When voltage is applied to the gate of the MOSFET, it creates a conductive channel between drain and source. The conductive channel amplifies the applied voltage control, permitting the flow of current between the drain and source, hence controlling the current. Thus, the MOSFET acts as a voltage-controlled switch, enabling or disabling the flow of current in the circuit.

The device works on the basis of majority carriers. The majority holes are holes in the p-type material beneath the gate of the MOSFET, and the electrons on the n-type material between the source and drain. When a voltage is applied to the gate of the MOSFET, the majority carriers in the channel, that is, the electrons, move due to the electric field, from the source to the drain.

The device is P-channel type MOSFET and it works on the same principle as the N-channel MOSFET, except for the opposite direction of the majority carriers. The majority carriers, that is, the majority holes in the p-type material beneath the gate of the MOSFET, move due to the electric field, from the source to the drain.

The device features an Advanced Trench MOSFET Technology, which is a process with a multilevel structure and optimized dopant profile, resulting in low on-resistance with excellent switching speed. Additionally, the device also features an optimized package with copper internal lead frame and improved power dissipation.

The device is also rated to operate over a wide temperature range, up to +150°C. It features an active Miller plateau clamp which increases device controllability in current-controlled applications and protects the device from gate-source over-drive.

Conclusion

The AUIRF7640S2TR is an advanced N-channel MOSFET designed for applications in automotive, industrial, and audio/video applications. It features an optimized package, low on-resistance, high power handling, switching speed, and temperature operating range. The device works on a basic working principle, where majority carriers are moved due to electric field, from source to drain, when a voltage is applied to the gate of the MOSFET. The device offers excellent performance in controlling the current in a circuit.

The specific data is subject to PDF, and the above content is for reference