| Allicdata Part #: | AUIRFB4610-ND |
| Manufacturer Part#: |
AUIRFB4610 |
| Price: | $ 1.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 73A TO220AB |
| More Detail: | N-Channel 100V 73A (Tc) 190W (Tc) Through Hole TO-... |
| DataSheet: |  AUIRFB4610 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.30000 |
| 10 +: | $ 1.26100 |
| 100 +: | $ 1.23500 |
| 1000 +: | $ 1.20900 |
| 10000 +: | $ 1.17000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 44A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The AUIRFB4610 field-effect transistor is a current-controlled, single-gate semiconductor device and a member of the family of advanced HEXFET® power MOSFETs. It is an excellent choice for a wide range of applications and can be used to control power in a variety of electrical tasks, including switching and regulation, protection, and amplification. This document will discuss the application field and working principle of the AUIRFB4610.The AUIRFB4610 is a depletion-mode power MOSFET that can be used in a wide variety of application fields. It is designed for high-frequency operations and provides efficient and precise control of DC motors, power supply systems, power converters, solenoids and relays, telecoms, lamps and displays, etc. Its key benefits include low conduction and switching losses, high-speed switching, and low input capacitance, allowing for high-frequency operation. In addition, its very low gate charge and low on-resistance make it well-suited for switching applications.The working principle of the AUIRFB4610 is based on the physical principle of the electro-gate. It consists of a semiconductor substrate with a metallic gate on one side and a source and drain on the other side. A positive voltage applied to the gate causes electrons to move from the source to the drain, forming an inversion layer in the process. This inversion layer serves as a conducting channel where current flows from the source to the drain when the gate voltage is maintained. Thus, the current is controlled by the gate voltage. This makes the AUIRFB4610 particularly useful for controlling power in a variety of applications.The AUIRFB4610 also has a number of features that make it an ideal choice for a wide range of applications. It has a low total gate charge, allowing for low and fast switching times, as well as a high current carrying capability and low on-resistance. In addition, it is designed for high-frequency operations, making it ideal for applications such as linear regulation and switching power supplies. Furthermore, its high input and gate impedance make it well-suited for protection and signal amplification.In conclusion, the AUIRFB4610 is an ideal choice for a wide range of application fields. Its feature set, combined with its high-frequency capabilities, make it an excellent choice for a number of tasks, including switching, linear regulation, protection, and signal amplification. Its low total gate charge and low on-resistance further make it well-suited for power control tasks. Taking all of this into account, the AUIRFB4610 is an excellent choice for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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