Allicdata Part #: | AUIRFR4105Z-ND |
Manufacturer Part#: |
AUIRFR4105Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 30A DPAK |
More Detail: | N-Channel 55V 20A (Tc) 48W (Tc) Surface Mount D-Pa... |
DataSheet: | AUIRFR4105Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 24.5 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFR4105Z is a type of Field Effect Transistor (FET), specifically a Metal-Oxide Semiconductor FET (MOSFET). It functions as a voltage-controlled switch in various applications, such as power conversion, signal inverters, and audio amplifiers. It has a wide variety of features including external parameters for temperature compensation and overheat protection, as well as built-in protection diodes for protection against reverse voltage and against voltage spikes.
The AUIRFR4105Z is a single-channel enhancement-mode FET designed to operate in the 100mA to 500mA range. It is designed to be used in a wide range of applications such as power switching and signal control. It is linear in operation, meaning that it reacts proportionately to changes in the voltage applied to its gate. The AUIRFR4105Z features a 200 mOhm typical on-resistance at 500mA, with a maximum on-state drain current (ID) of 1000mA and a maximum drain-source voltage (VDS) of 30V.
The AUIRFR4105Z has a number of usages in a variety of different applications. The lower gate-to-drain capacitance and reduced gate leakage current of the AUIRFR4105Z make it ideal for power switching applications. It has been successfully used in a variety of power converters, including switching power supplies, motor controllers, and solar inverters. Its low on-resistance and current handling capabilities make it perfect for audio amplifiers and signal inverters as well.
The working principle of the AUIRFR4105Z is based on a voltage-controlled switching application. The transistor can be driven either by a direct or transistor-controlled current. When a voltage is applied to the gate of the transistor, it forms an electric field that in turn induces a current in the channel, called the channel current. This channel current is proportional to the gate voltage and is responsible for the operations of the transistor as a switch. When the gate voltage is below the threshold voltage, the current passing through the transistor is zero, and the transistor acts as an open switch. However, when the gate voltage exceeds the threshold voltage, the transistor turns on and conducts current. The amount of current passing through the transistor depends on the gate voltage, the magnitude of the drain-source voltage, and the resistance of the channel.
The AUIRFR4105Z is a single-channel MOSFET designed for efficient power conversion and signal control. It provides a variety of features such as current and temperature monitoring, external and internal protection diodes, and gate control. Its range of operational characteristics, including low gate capacitance, low gate leakage current, and high current handling make it suitable for use in a wide range of power switching and signal applications. The working principle of the AUIRFR4105Z is based on the principle of a voltage-controlled switch, operated by a direct or transistor-controlled current which passes through the transistor when the gate voltage exceeds the threshold voltage.
The specific data is subject to PDF, and the above content is for reference
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