AUIRFR5505TRL

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	57W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	650pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	110 mOhm @ 9.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

AUIRFR5505TRL is a type of single N-Channel Field Effect Transistor (FET). This transistor is used in low side switch applications such as low power DC motor control, level shifting or switching loads with low source-drain voltages. As such, this device is used in various consumer and industrial applications.

Application Field

The AUIRFR5505TRL is mainly used as low side switch, level shifting and load switching applications. It can also be used in low power DC motor control, as well as for controlling transistors and logic gates. In addition, this device can be used in other high voltage and high current switching applications, such as in lighting applications, and in automotive electronics.This transistor is ideal for applications where the signal needs to switch on and off quickly, as the device has high switching speeds. It can also be used for higher voltage and current switching applications, as it has a breakdown voltage of 30 volts and a maximum drain current of 20Amps. Additionally, this device has a total gate charge of only 25nC, so it is suitable for applications requiring fast gate charging and discharging.

Working Principle

The working principle of AUIRFR5505TRL is the same as any other FET. This device has an N-Channel, which consists of a source and a drain that act as the two ends of a transistor. When the gate voltage rises to a certain level, current begins to flow through the N-Channel between the source and the drain. This is what allows the transistor to control the electrical signal.The device also has two modes of operation: Linear mode, and Saturation mode. In Linear mode, the device acts as a variable resistor, where the voltage and resistor are multiplied together to obtain the current, known as Drain to Source Current or IDS. In Saturation mode, the device acts as a switch, where the voltage is multiplied by the Drain to Source Voltage or VDS to obtain the current.

Conclusion

The AUIRFR5505TRL is a single N-Channel Field Effect Transistor (FET), and is used for a variety of switching applications such as low side switch, level shifting, and load switching. It has a wide range of applications, from low power DC motor control to high voltage and current switching applications. It has high switching speeds, a breakdown voltage of 30V, and a maximum drain current of 20Amps. Additionally, it has a total gate charge of only 25nC, making it suitable for applications requiring fast gate charging and discharging. Finally, the working principle of this device is the same as that for any other FET, with two modes of operation: Linear and Saturation mode.

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