Allicdata Part #: | AUIRFS4127TRL-ND |
Manufacturer Part#: |
AUIRFS4127TRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET NCH 200V 72A D2PAK |
More Detail: | N-Channel 200V 72A (Tc) 375W (Tc) D²PAK (TO-263AB... |
DataSheet: | AUIRFS4127TRL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5380pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | Automotive, AEC-Q101, HEXFET® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 44A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AUIRFS4127TRL transistors are of the single FET (Field Effect Transistor) MOSFET type and are used mainly in the field of power automation and control. These transistors are designed to deliver superior performance characteristics at a cost efficient price and are ideally suited for the rigorous operating conditions required in large power circuitry.
The name AUIRFS4127TRL stands for the characteristic of the transistor which comprises a range of twenty-four FET (Field Effect Transistor) MOSFET transistors. The AUIRFS4127TRL features an ultra low ESR (equivalent series resistance) which provides better control and performance under high load conditions.
A FET MOSFET transistor is a type of Field Effect Transistor which utilizes metal oxide semiconductor technology. This type of transistor is used in numerous applications including switching, amplification, and power control. Unlike the more commonly found bipolar transistors, the FET MOSFET transistor is capable of controlling very large currents without generating immense heat.
A MOSFET is an active semiconductor device consisting of a single transistor integrated with a metal oxide semiconductor junction. The function of this transistor device is to pass current from one terminal to another when a voltage is present across the two terminals. It is important to note that the MOSFET cannot pass current in the reverse direction; this limitation makes the FET MOSFET transistor particularly suitable for applications where only one direction of current is desired.
The working principle of a MOSFET transistor is based on the principle of capacitance. This is because a MOSFET transistor consists of two terminals – the gate and the source. The gate terminal is connected to a voltage source whereas the source terminal is grounded. When a voltage is applied to the gate terminal, it creates an electrostatic field between the gate and the source, increasing the capacitance between the two terminals. This increased capacitance allows current to flow from the source to the gate in response to an input signal.
The AUIRFS4127TRL transistors provide multiple performance benefits to users. Most notably, the ultra low ESR of these transistors ensures better control and performance under high load conditions, making them ideally suited for applications such as power supply automated control. In addition, the device also features excellent high-frequency performance, making it suitable for applications such as LED lighting control and switching.
The AUIRFS4127TRL transistors are available in three different package types and are lead-free devices. These transistors are also RoHS compliant and thus, will easily fit into most systems without the need for additional modifications. Furthermore, AUIRFS4127TRL transistors are compliant with the regulations of IEC60884 and IEC60825 safety certification agencies, providing users with the assurance that they are using a truly safe and reliable device.
The specific data is subject to PDF, and the above content is for reference
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