AUIRFS8407-7TRL Allicdata Electronics
Allicdata Part #:

AUIRFS8407-7TRL-ND

Manufacturer Part#:

AUIRFS8407-7TRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 240A D2PAK
More Detail: N-Channel 40V 240A (Tc) 231W (Tc) Surface Mount D2...
DataSheet: AUIRFS8407-7TRL datasheetAUIRFS8407-7TRL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 231W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7437pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AUIRFS8407-7TRL is an advanced automotive level MOSFET manufactured by Infineon. This MOSFET, a single FET, is designed for highly efficient application in automotive systems, such as electric power steering, battery management and electronic control units. In this article, we will investigate the application field and working principle of this particular MOSFET.

First of all, the AUIRFS8407-7TRL is especially geared towards automotive systems. It has a breakdown voltage value of 40V and a R DS(ON) parameter of just 0.60mΩ. It has an incredibly low total gate charge (Qg) of just 8.45nC and its low on-state resistance of 0.6mΩ makes it a perfect fit for providing the high efficiency needed in automotive systems. It also has a rise time of just 8.8ns and a fall time of 13.9ns, making it an ideal choice for high-frequency switches.

In addition to its automotive applications, the AUIRFS8407-7TRL can also be used in other applications. It was designed for maximum flexibility and as such can easily handle different power MOSFET applications, such as switching and motor drive circuits, rectification and LED lighting applications. Furthermore, its low on-state resistance and total gate charge makes it suitable for applications where low power loss and superior heat dissipation are necessary.

The AUIRFS8407-7TRL is an n-channel MOSFET and utilizes a process known as metal-oxide-semiconductor field-effect transistor (MOSFET) technology. In essence, it is a three-terminal transistor which consists of a metal oxide dielectric layer, a channel and a gate. The metal oxide layer acts as an insulator between the channel and the gate. When voltage is applied to the gate terminal, a electric field is created between the gate and channel. This electric field produces an electrostatic force that modifies the conductivity of the channel, allowing for current flow through the transistor.

In summary, the AUIRFS8407-7TRL is a single FET specifically designed for use in automotive systems. It has a low on-state resistance and a fast response time which makes it particularly useful for high-efficiency applications. Furthermore, it can easily be integrated into other applications such as switching and motor drive circuits, rectification and LED lighting. Finally, it utilizes an MOSFET process which leverages an electric field to modify the conductivity of the channel, allowing for current flow control.

The specific data is subject to PDF, and the above content is for reference

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