Allicdata Part #: | AUIRLR2905TRL-ND |
Manufacturer Part#: |
AUIRLR2905TRL |
Price: | $ 0.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 42A DPAK |
More Detail: | N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | AUIRLR2905TRL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.55447 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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An AUIRL2905TRL is a power MOSFET that is typically used in applications such as motor control systems and switching power supplies. It is a N-channel enhancement mode MOSFET with low drain-to-source on resistance and high linearity characteristics. This make the AUIRL2905TRL an ideal choice for applications such as DC/DC converters, pulse width modulation (PWM) systems, and switching power supplies.
In power MOSFETs, the current between the source and the drain is only induced by a strong electric field, which is generated by an applied external voltage on the gate. This makes the power MOSFETs an ideal choice for switching applications as it enables fast turn-on and turn-off times, easy control of high current loads, and low power consumption. The AUIRL2905TRL uses a silicon-based semiconductor material and can withstand voltages up to 500V. The MOSFET has an on-resistance (RDS(on)) of 0.43 mΩ, making it suitable for applications that require low power consumption.
The AUIRL2905TRL is a single MOSFET device, with a single gate and single drain. It has a drain-to-source voltage rating of VDS of 500V, maximum drain current of 30A, and a threshold voltage Vth of 4V. Due to its low gate charge and threshold gate voltage, it can operate in both fast switching and low gate-source voltage conditions. It is also highly reliable as it comes with an ESD rating of 6KV.
In operation, a positive gate voltage is applied to the gate terminal of the AUIRL2905TRL to induce a strong electric field between the source and the drain. When the gate voltage is greater than the threshold voltage (4V), the power MOSFET turns on and drain current flows from the source to the drain. When the gate voltage is reduced to a level below the threshold voltage, the power MOSFET turns off and all drain current is blocked between the source and the drain terminals. In addition, the power MOSFET exhibits a “triode” or linear region, where the drain current is directly proportional to the gate-source voltage.
The AUIRL2905TRL is a versatile and reliable power MOSFET that is suitable for a wide range of applications. It can be used to switch large loads such as motors, and it can be used in both high-and low-power applications. In addition, it is highly reliable and can be used in applications requiring up to 500V VDS. Overall, the AUIRL2905TRL is an excellent choice for applications that require fast switching and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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