AUIRLZ24NS

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	480pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	60 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The AUIRLZ24NS is a field effect transistor (FET) used in a wide variety of electronic applications. It is a single-gate MOSFET device, which makes it suitable for many high-power applications, since it provides a fast switching time and low on-resistance. In this article, we will discuss the AUIRLZ24NS application field and working principle.

Application Fields

The AUIRLZ24NS FET is used in a number of applications due to its high power capabilities. These applications include:

• Power conversion
• High-frequency switching
• Load switching
• DC-DC converters
• DC-AC inverters
• Motor control
• Voltage regulators

The AUIRLZ24NS FET is also suitable for use in high-voltage and high-frequency applications, due to its low on-resistance and fast switching time.

Working Principle

The AUIRLZ24NS FET is a single-gate MOSFET device, which means that it uses a single voltage, or gate, to control the device’s current. The voltage applied to the gate controls the amount of current that can flow through the device.The FET’s gate and drain are connected to sources of electrical power, and the source is connected to ground. When the gate is biased at a voltage greater than the threshold voltage, current will flow between the source and the drain. When the gate voltage is reduced to below the threshold voltage, the current flow will be reduced or stopped completely. The current flow is determined by the voltage applied to the gate, which creates an electric field in the channel region between the source and the drain. This electric field is then modulated by other electrical characteristics, such as the gate capacitance and the bulk capacitance.When the gate voltage is changed, the electric field is also changed, which modulates the current flowing between the source and the drain. This modulation is called transconductance, and is specified by the device’s transconductance parameter, which is usually between 1 and 10 millisiemens (mS).

Conclusion

The AUIRLZ24NS FET is a single-gate MOSFET device, which is suitable for many high-power applications due to its low on-resistance, fast switching time, and ability to handle high-voltage and high-frequency signals. It is used in a variety of applications, such as power conversion, load switching, motor control, and voltage regulation.The FET’s working principle is based on the modulation of current flow through a channel, which is created by the electric field created by the applied gate voltage. The current flow is further modulated by the device’s capacitance properties, which can be adjusted to optimize performance.

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