BD135G Allicdata Electronics
Allicdata Part #:

BD135GOS-ND

Manufacturer Part#:

BD135G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 1.5A TO225AA
More Detail: Bipolar (BJT) Transistor NPN 45V 1.5A 1.25W Throu...
DataSheet: BD135G datasheetBD135G Datasheet/PDF
Quantity: 649
Stock 649Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: BD135
Description

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A single bipolar transistor (BJT) is a three-terminal device that can be used to amplify or switch electronic signals and electrical power. The BD135G is a mode of PNP transistors, designed and manufactured by STMicroelectronics, intended for use in medium-power switching and amplifier applications. This particular transistor is usually found in electronic applications that require high levels of precision, stability, and durability.

As a PNP device, its junction consists of an N-type semiconductor between two P-type semiconductors. In terms of basic structure, the BD135G contains a collector, an emitter, and a base voltage. A voltage applied to the base will alter the current that flows between the collector and the emitter. This is the principle known as "supply-current transfer".

The BD135G offers a maximum collector current of -100mA. This device also has a very wide voltage range, running from 65 mV to 125 V. In addition, its minimum current amplification factor (beta) is usually approximately 200. This means that at least 200 times the current that is supplied to the base will be available at the collector.

The BD135G features a very high breakdown voltage of 40 volts. A breakdown voltage is the amount of voltage that needs to be applied across a component before it begins to breakdown and stops working. This ensures that the BD135G can operate properly in a wide range of voltages.

The BD135G is an excellent choice for power switching and amplification in medium-power applications. It can be used to amplify signals in communication systems, as well as in power devices needing a high-current capacity and low-voltage operation. Its low-noise, high-speed performance is suitable for RF applications, as well as in digital and power amplifier designs. Additionally, the BD135G is rated for high-reliability and general-purpose applications, such as computers, energy systems, and process controls.

In summary, the BD135G is a high-performance, single bipolar transistor, designed to handle a wide range of medium-power applications. It has an impressive breakdown voltage, making it suitable for a variety of voltage ranges. With a maximum collector current of -100mA, and a minimum current amplification factor of 200, the BD135G is an excellent choice for power switching and amplification applications.

The specific data is subject to PDF, and the above content is for reference

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