Allicdata Part #: | 568-6149-2-ND |
Manufacturer Part#: |
BF1201R,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 10V 30MA SOT143R |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 15mA 400MHz 29dB ... |
DataSheet: | BF1201R,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 400MHz |
Gain: | 29dB |
Voltage - Test: | 5V |
Current Rating: | 30mA |
Noise Figure: | 1dB |
Current - Test: | 15mA |
Power - Output: | -- |
Voltage - Rated: | 10V |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BF1201 |
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BF1201R,215 is a type of RF MOSFET that is designed to be used in a variety of applications. It is an insulated gate bipolar transistor (IGBT) that is widely used in radio frequency (RF) applications because of its high power handling capabilities. It is a voltage-controlled device, meaning that it uses a voltage as an input to control the current flow through the device.
The BF1201R,215 is designed to be compatible with a variety of wideband amplifier circuits. It is well-suited to radio frequency (RF) amplification of signals in the frequency range from 0.1 to 1GHz. The device has low drive voltage requirements, making it particularly effective for miniature antennas with low drive voltage capability.
The maximum drain current for the BF1201R,215 is 6A and the maximum Drain-Source Voltage is 200V. The input capacitance for this device is 11nF. The device is also capable of operating at temperatures as low as -55º C. This makes it suitable for a variety of applications, from consumer electronics to medical equipment.
The working principle of the BF1201R,215 is the same as any other type of transistor. When the gate voltage is applied, it creates an electric field between the source and drain. This electric field is used to control the flow of current through the device, allowing it to be used as an amplifier.
When the gate voltage is high, the electric field is strong and the device operates in the enhancement mode. In this mode, the current flow is larger than when the gate voltage is low. When the gate voltage is low, the electric field is weakened and the device operates in the depletion mode. In this mode, the current flow is reduced.
The BF1201R,215 can be used in a wide variety of applications. It is an ideal choice for RF amplifiers and other applications requiring high power handling. It can also be used in audio amplifiers, allowing for higher power and better sound quality. The device can also be used in power supplies and voltage regulators, allowing for more efficient operation and lower power consumption.
Overall, the BF1201R,215 is an excellent choice for a variety of RF applications. It is a voltage-controlled device that is capable of high power handling and low drive voltage requirements. It is also capable of operating in both enhancement and depletion modes, allowing it to be used in a variety of applications. The device is also well-suited to miniature antennas, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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