BF1218,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	N-Channel Dual Gate
Frequency:	400MHz
Gain:	32dB
Voltage - Test:	5V
Current Rating:	30mA
Noise Figure:	0.9dB
Current - Test:	19mA
Power - Output:	--
Voltage - Rated:	6V
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	6-TSSOP
Base Part Number:	BF1218

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BF1218,115 application field and working principle

BF1218,115 is a N-channel RF Power MOSFET which is designed specifically for RF power amplifier applications. It was developed for use in cellular base stations and other wireless communications applications. It has a low on-resistance and low gate drive requirements. It has a wide operating voltage range of 5V to 12V and can be used for applications up to 1.5GHz.

Electrical Characteristics and Features

The BF1218,115 has a maximum drain-to-source voltage (VDSS) of 28V and a maximum drain current (ID) of 36A. Its maximum gate-to-source voltage is +/-5V, which makes it suitable for high voltage operation. It has a low gate-to-drain capacitance of 0.3pF, which makes it an ideal choice for high frequency applications. In addition, the device has a wide frequency range of up to 1.5GHz.The device also has a high output power capability with a power gain of up to 14dB. Its channel-to-channel isolation is good, with a maximum value of 25dB. The device has a high linearity and its phase noise figure is low, making it well suited for applications such as base station transmitters and other wireless transceiver applications.

Applications

The BF1218,115 is suitable for a range of applications, including base station transmitters for wireless communications and other high frequency transmitters. It can also be used in consumer electronics, such as RF amplifiers for TV tuners and radio receivers. It can also be used in industrial, medical and military applications.

Working Principle

The BF1218,115 is a power MOSFET. It consists of a source, a drain and a gate, which are all formed on a silicon substrate. When a voltage is applied to the gate, it repels the electrons in the channel and forms a conducting path between the source and the drain. This allows a current to flow between the source and the drain.The device has a high input impedance, which makes it suitable for use with high input signal levels. The low capacitance and low resistance of the device make it ideal for high frequency applications.The device is also robust and resistant to thermal and electrical stress. This means that it can tolerate high current and voltage levels, making it suitable for applications where high levels of power or current are required.

Conclusion

The BF1218,115 is a versatile N-channel RF Power MOSFET which is designed specifically for high frequency and power amplifier applications. It has a wide operating voltage range of 5V to 12V and can be used for applications up to 1.5GHz. It is suitable for use in base station transmitters, consumer electronics and various industrial, medical and military applications. It has a wide frequency range, low on-resistance, high linearity and high power gain. It is also robust and resistant to thermal and electrical stress.

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