BF1208D,115 Allicdata Electronics
Allicdata Part #:

BF1208D,115-ND

Manufacturer Part#:

BF1208D,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH DUAL GATE SOD666
More Detail: RF Mosfet N-Channel Dual Gate 5V 19mA 400MHz 32dB ...
DataSheet: BF1208D,115 datasheetBF1208D,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel Dual Gate
Frequency: 400MHz
Gain: 32dB
Voltage - Test: 5V
Current Rating: 30mA
Noise Figure: 0.9dB
Current - Test: 19mA
Power - Output: --
Voltage - Rated: 6V
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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The BF1208D-115 application field and working principle of transistors make it a commonly used device in electronics. Transistors generally fall under two categories, FETs and MOSFETs, with RF being the RF type majoring itself in the application field.

FETs, or field-effect transistors, are a type of transistor that operates on the principle of an electric field. This type of transistor is highly versatile, as it can amplify, switch and regulate low to medium frequencies. Depending on the type of transistor, FETs can be used in a variety of circuits, including audio, radio and digital applications. FETs are used for applications ranging from small ICs to large-scale digital applications, making them a versatile choice in the electronics industry.

MOSFETs, or metal-oxide semiconductor field-effect transistors, are a type of FET that uses a metal-oxide semiconductor as the gate material. MOSFETs are used in a variety of applications, including switching, amplifying, and regulating power. They are extremely efficient in their use of energy, as they can be controlled with as little as a few microamps of current. MOSFETs are also used for radio-frequency (RF) applications, as they are capable of high frequency switching, amplifying, and regulating.

The BF1208D-115 is a RF type MOSFET that is commonly used in both analog and digital applications. It has a maximum drain-source voltage of 18V, a maximum source-drain current of 20A, and a gate-source voltage of 25V. It is a highly efficient device due to its low power consumption and high switching speed. The BF1208D-115 is well-suited for a variety of digital and analog applications including audio, video, RF, and wireless communications.

The working principle of the BF1208D-115 is relatively simple. When a small signal is applied to the gate, the channel between the source and drain becomes conductive. When the channel becomes conductive, the drain-source current is regulated by the signal applied to the gate. Due to the relatively low power consumption and high switching speed of the transistor, it is ideal for applications where power efficiency and speed are critical.

In summary, the BF1208D-115 application field and working principle of transistors make it a commonly used device in electronics. As a RF type MOSFET, it is suitable for both analog and digital applications and is a highly efficient device due to its low power consumption and high switching speed. The BF1208D-115 is an all-purpose transistor that is suitable for a variety of applications including audio, video, RF, and wireless communications.

The specific data is subject to PDF, and the above content is for reference

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