BF1202R,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-6152-2-ND |
Manufacturer Part#: |
BF1202R,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 10V 30MA SOT143R |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 12mA 400MHz 30.5d... |
DataSheet: | BF1202R,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 400MHz |
Gain: | 30.5dB |
Voltage - Test: | 5V |
Current Rating: | 30mA |
Noise Figure: | 0.9dB |
Current - Test: | 12mA |
Power - Output: | 200mW |
Voltage - Rated: | 10V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143R |
Base Part Number: | BF1202 |
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The BF1202R,215 belongs to the family of RF transistors, more specifically, Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs). It is a high performance transistor, which is used in medium power applications in both commercial and military sectors. In this article, we will discuss the application field and working principle of the BF1202R,215.
Application Field
The BF1202R,215 is used in medium power applications, primarily in the military and commercial sectors. It is a low-noise, high-performance transistor, which is primarily used for the design of power amplifiers, transmission line matching circuits and other related applications. It is also used in computer monitors and other digital displays, as well as in RF communication devices and satellite systems.
Working Principle
The BF1202R,215 features a suppression current, which is commonly referred to as “gate-source capacitance”. This is used to reduce the draw current from the gate and minimise the power supply voltage drop. The supplier includes an integrated soft-start circuit, which prevents in-rush current and minimises start-up power dissipation. The transistor features a high breakdown voltage and can withstand supply voltages of up to 2.65KV.
The BF1202R,215 also includes an internal thermal resistance, which is beneficial for increased reliability. It maximises the efficiency of the input and output stage transistors, resulting in reduced power dissipation. In addition, the transistor also includes dual-gate protection, which provides protection against high energy transients, such as electrostatic discharge. This makes the transistor suitable for high-volume applications, such as industrial and automotive systems.
The BF1202R,215 also has a wide common-mode input range, which allows the device to be used in a variety of conditions. It is designed to operate at high-frequency and offers excellent frequency-response characteristics. It has a wide dynamic range and can handle large input signals, making it suitable for use in wideband systems such as radio base stations, wireless communication systems and other related applications.
In conclusion, the BF1202R,215 is a high performance RF transistor, which offers improved suppression currents, thermal protection, higher breakdown voltages and dual gate protection. Its wide common-mode input range and improved frequency-response characteristics make it a suitable solution for various medium power applications, such as power amplifiers and transmission line matching circuits.
The specific data is subject to PDF, and the above content is for reference
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