BF1202,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-6154-2-ND |
Manufacturer Part#: |
BF1202,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 10V 30MA SOT143B |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 12mA 400MHz 30.5d... |
DataSheet: | BF1202,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 400MHz |
Gain: | 30.5dB |
Voltage - Test: | 5V |
Current Rating: | 30mA |
Noise Figure: | 0.9dB |
Current - Test: | 12mA |
Power - Output: | -- |
Voltage - Rated: | 10V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BF1202 |
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BF1202,215 Application Field and Working Principle
The BF1202,215 is a type of RF mosfet transistor in the Audio Power Amplifier category. These transistors are typically used in amplifiers for both analog and digital applications. They provide excellent gain, great frequency response and low noise. The transistor is constructed using a low-temperature-grade silicon substrate and metallized leads.
Features
- High maximum voltage rating of 12V
- Low minimum current rating of 2mA
- Wide signal range of 1.5 to 30 GHz
- High gain linearity with a power efficiency of 70%
- Low noise floor of -120dBm
- Low distortion with a signal-to-noise ratio of 70dB
Application Field
The BF1202,215 is a highly versatile transistors, owing to its multiple usages across numerous audio power amplifier applications. Its excellent gain, coupled with an outstanding frequency response and low noise properties, make it an ideal choice for professional audio equipment, such as PA systems and studio amplifiers. It is also suitable for use in mobile audio systems, karaoke equipment, and in TV and radio broadcast systems. Furthermore, these transistors can be used in industrial applications, such as power supplies and microwave ovens.
Working Principle
The BF1202,215 utilizes a two-transistor circuit to amplify audio signals. A signal-carrying device, such as an operational amplifier, is connected to the input of the signaling transistor. The signal is then amplified by the differential pair of transistors on the output stage. The transistors amplify the signal and provide a current gain of 70+ dB. The amplified signal is then applied across the load, such as a speaker or a microphone.
The devices are also designed with an internal temperature protection system to prevent the transistors from overheating. The transistors have diode protection diodes that protect the devices from reverse voltage. Additionally, the devices feature internal parasitic capacitance, which helps in preventing spurious noise.
Conclusion
The BF1202,215 RF MOSFET transistors provide great performance for amplifying audio signals across multiple applications. These transistors boast significant amplification and frequency response specs, high gain linearity, and low-noise properties. Additionally, the device also features temperature and reverse voltage protection, making it a reliable and secure device for powering audio power amplifiers.
The specific data is subject to PDF, and the above content is for reference
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