BF1211,215 Allicdata Electronics
Allicdata Part #:

568-1959-2-ND

Manufacturer Part#:

BF1211,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH DUAL GATE 6V SOT143B
More Detail: RF Mosfet N-Channel Dual Gate 5V 15mA 400MHz 29dB ...
DataSheet: BF1211,215 datasheetBF1211,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel Dual Gate
Frequency: 400MHz
Gain: 29dB
Voltage - Test: 5V
Current Rating: 30mA
Noise Figure: 0.9dB
Current - Test: 15mA
Power - Output: --
Voltage - Rated: 6V
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B
Base Part Number: BF1211
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BF1211,215 is a type of transistor, also known as a field-effect transistor (FET). It is a special type of FET, known as a radio frequency (RF) FET. RF FETs have applications in a wide range of industries, from consumer electronics to industrial engineering.

In a regular transistor, current is switched on or off depending on the voltage applied to the gate. In an RF FET, this action occurs very quickly, so it can be used for faster, more efficient data communications.

A simplified working principle of the BF1211,215 can be illustrated with a series of steps. First, an electric current is applied to a gate electrode, which charges up a thin oxide layer. This layer acts like an insulator, blocking the flow of electrons between the source and drain electrodes. Next, a voltage applied to the source and drain electrodes causes a strong electric field to build up between them, across the oxide layer.

The surface electrons on the oxide layer are attracted by this electric field, breaking through the insulating barrier and allowing electrons to flow between the source and drain electrodes. By controlling the voltage and current applied to the gate electrode, the FET can be switched off or on very quickly, reducing the amount of power needed to operate.

The BF1211,215 has a variety of applications in the consumer electronics, automotive, and industrial sectors. In the consumer electronics industry, it is used in a variety of applications, from satellite radio to cellular phone base station antennas. In the automotive industry, it is used in engine control systems, as well as radio-frequency systems and other components. Finally, in the industrial sector, it is used for data transmission, as well as for low-noise amplifiers and radio-frequency components.

The BF1211,215 is an important component in the development of faster, more efficient communication systems. It provides a variety of uses in the consumer electronics, automotive, and industrial sectors, and its quick switching action makes it an ideal choice for applications that require high-speed data rate communication.

The specific data is subject to PDF, and the above content is for reference

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