BF1208,115 Allicdata Electronics
Allicdata Part #:

BF1208,115-ND

Manufacturer Part#:

BF1208,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH DUAL GATE SOT666
More Detail: RF Mosfet N-Channel Dual Gate 5V 19mA 400MHz 32dB ...
DataSheet: BF1208,115 datasheetBF1208,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel Dual Gate
Frequency: 400MHz
Gain: 32dB
Voltage - Test: 5V
Current Rating: 30mA
Noise Figure: 1.3dB
Current - Test: 19mA
Power - Output: --
Voltage - Rated: 6V
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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BF1208,115 Application Field and Working Principle

BF1208,115 is the type of MOSFET, which stands for “Metal-Oxide-Semiconductor Field-Effect Transistor”. It is a voltage-controlled field-effect transistor (FET) with a maximum drain current rating of 115A and a maximum drain-source voltage rating of 200V.

As an RF (Radio Frequency) device, BF1208,115 MOSFETs can be used in amplifier circuits and power supply converters. The main application field is in the defense, professional communications networks, industrial and medical markets.

BF1208,115 MOSFETs can operate at high frequencies, up to 10 GHz, and draw very low input current and power. To put it in simpler terms, these transistors are able to operate at very high frequencies, allowing signals to be sent at faster rates than normal.

MOSFETs are unique in the way they work because they don\'t have a gate bias current like the traditional bipolar transistors, which makes them very efficient when it comes to power consumption. The MOSFETs also have low input capacitance and low gate-to-drain capacitance, making them excellent for use in amplifier designs where high speed and low distortion are important.

In order to understand how the BF1208,115 transistors work, we must first look at how the FETs operate. The MOSFETs use a gate-source voltage to control the flow of current between drain and source. This gate-source voltage is the voltage measured across the gate and source terminals of the MOSFET.

When the gate-source voltage is increased, a current flows through the device. This current is commonly referred to as the “drain current.” If the gate-source voltage is increased beyond a certain point (called the “breakdown voltage”) the current flowing through the device will increase exponentially.

The drain current is usually measured in amperes or milliamperes, which allow the MOSFET to control its output current. The drain-source voltage is also important in determining the amount of power the device can handle. The higher the drain-source voltage, the higher the maximum power that the device can handle.

BF1208,115 transistors are used for a variety of applications such as high speed switching, low noise amplifiers and power switching. They have a low on-state resistance and are capable of operating at high temperatures. This makes them especially useful for high power applications.

In summary, the BF1208,115 are transistors in the MOSFET family and are widely used for high speed, low noise and power switching applications. Their unique features make them an excellent choice for those who need high power performance, low power consumption and high frequency operation.

The specific data is subject to PDF, and the above content is for reference

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