BF1202WR,115

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Obsolete
Transistor Type:	N-Channel Dual Gate
Frequency:	400MHz
Gain:	30.5dB
Voltage - Test:	5V
Current Rating:	30mA
Noise Figure:	0.9dB
Current - Test:	12mA
Power - Output:	--
Voltage - Rated:	10V
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	CMPAK-4
Base Part Number:	BF1202

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Introduction to BF1202WR,115The BF1202WR,115 is a monolithic silicon N-Channel RF Field Effect Transistor (FET) designed for specific applications such as receivers, buffers and power amplifiers at up to 115MHz. This FET is well suited for low noise and low cost applications, including WiFi, as it offers low distortion with very minimal losses. This article will discuss the application fields of this FET, as well as its working principle.Application FieldsThe BF1202WR,115 is used in a wide range of applications in the electronics industry. In the automotive sector, it can be used for in-car audio systems, power supplies and radar systems. In the consumer electronics sector, it can be used in portable phones, personal audio players, alarm systems and DSL modems. In the medical sector, it can be used in medical sensors, cardiograms and blood pressure monitors.The BF1202WR,115’s low-noise design makes it suitable for use in wireless systems, such as for wireless sensors, Wi-Fi, Bluetooth, GPS and RFID systems. Additionally, it is commonly used in industrial systems, such as motor controls, machine automation and robotics. In telecommunications and military applications, it is used in signal processing, satellite communications and radars.Working PrincipleThe working principle of the BF1202WR,115 is based on the physical phenomenon of electron flow, which is often referred to as “Field Effect”. Field-effect transistors have three terminals, namely the Drain, Gate and Source. The Drain-Source barrier forms an insulated barrier between the two, allowing current to flow. The action of the Gate voltage determines the degree of current flow through the FET.When a voltage is applied to the Gate terminal, it creates an electric field in the channel between the Gate and Drain. This electric field modulates the number of electrons in the channel and therefore affects the current, or the Ion flow, through the FET. The Gate voltage controls the width of the channel and thus the amount of current, allowing for adjustable current flow. This adjustable current flow is the basis of the working principle of the BF1202WR,115 FET.ConclusionThe BF1202WR,115 is a monolithic silicon N-Channel RF Field Effect Transistor designed for specific applications such as receivers, buffers and power amplifiers at up to 115MHz. It is commonly used in a wide range of applications in the electronics industry, including the automotive, consumer electronics and medical sectors. Additionally, the low-noise design makes it suitable for use in wireless systems, such as Wi-Fi, Bluetooth, GPS and RFID systems. The working principle of the BF1202WR,115 FET is based on the physical phenomenon of electron flow, which is often referred to as “Field Effect”.

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