BF1204,115 Allicdata Electronics
Allicdata Part #:

568-6156-2-ND

Manufacturer Part#:

BF1204,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 10V 400MHZ 6TSSOP
More Detail: RF Mosfet N-Channel Dual Gate 5V 12mA 400MHz 30dB ...
DataSheet: BF1204,115 datasheetBF1204,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel Dual Gate
Frequency: 400MHz
Gain: 30dB
Voltage - Test: 5V
Current Rating: 30mA
Noise Figure: 0.9dB
Current - Test: 12mA
Power - Output: --
Voltage - Rated: 10V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Base Part Number: BF1204
Description

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BF1204,115 is a type of RF power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), manufactured by A-Tenders. The device is sometimes referred to as the A-Tenders MPF-1204,115, owing to its extreme cost-effectiveness in -quality electronic applications. It is a part of the powerful family of A-Tender Transistor, designed mainly for use in RF (Radio Frequency) systems and automotive electronics, resonating in frequencies from 9 KHz to 2 GHz and power from 5 W to 150 W.

The BF1204,115 is a transistor designed with the latest CMOS and SiGe technologies to provide high performance in signal processing and power applications. It features an operating temperature range between -55ᵒC and 175ᵒC, and an output current capacity of 15A in drain source short circuit. It also has a low gate-source capacitance, making it suitable for use in high frequency applications.

The BF1204,115 is capable of fast switching times, which makes it especially suitable for high frequency applications, such as WLAN and microwave amplifiers. Its maximum drain-source voltage is 10 V and the maximum gate threshold voltage is 8 V.

The drain-source on-state resistance (RDS(on)) of the BF1204,115 is typically 15 Ohms, making it ideal for applications where power efficiency is a priority. The device also has a high breakdown voltage, making it suitable for applications where a high voltage is required.

The operating principle of the BF1204,115 involves controlling the current through the channel between source and drain terminals. The current is controlled by applying a voltage between the gate and source terminals, which allows the device to turn on or off depending on the voltage applied. The MOSFET structure of the device also allows for very low power dissipation, making it suitable for power efficient applications.

The typical application fields of the BF1204,115 are in the automotive industry and other RF applications, such as cellular base stations, RF amplifiers, WLAN amplifiers, and microwave amplifiers. It is also used in automotive electronics, especially in engine control and transmission control where high power performance is required. In addition, it is also suitable for industrial applications such as motion control and AC/DC motor control.

In conclusion, the BF1204,115 is a type of RF power MOSFET designed for high frequency applications. It is ideal for applications requiring high efficiency, power, switching times and high voltage. Its applications range from automotive and RF systems to industrial applications.

The specific data is subject to PDF, and the above content is for reference

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