BF1217WR,115

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BF1217WR,115 is a power amplifier transistor, which belongs to the transistors-FETs, MOSFETs-RF category. It is designed for use in low frequency applications. This power amplifier is built to offer high efficiency, low noise and exceptional gain. The maximum collector current of this device is 12A and the power dissipation is 95W.

BF1217WR,115 has many applications in various fields such as broadcast systems, powerlines systems, consumer electronics, home theater, automotive and telecommunications. This device is suitable for a wide range of frequencies such as VHF, UHF, ISM, HF, Cellular and Marine bands. It can also be used in low noise amplification and in radio-frequency circuity.

The transistor of BF1217WR,115 is a Field Effect Transistor (FET) of the Metal Oxide Ariconductor Field Effect Transistor (MOSFET) type. It is used to control the current flow using a single voltage. A MOSFET has three terminals (gate, drain and source) which act like separate circuits. The voltage on the gate terminal causes a current to flow between the drain and source terminals, which is known as the drain current. The MOSFET transistors offer high speed performance and low noise due to their high input impedance. They are also capable of switching high frequencies and are perfect for RF circuits.

The working principle of BF1217WR,115 is based on the electron gain from the negatively-biased gate electrode. When current passes through the gate electrode, it creates an electric field which attracts electrons from the source terminal. The negative charge attracts the electrons and causes a current flow from the source to the drain. This current is known as the drain current. When the voltage applied to the gate terminal is increased, the drain current will increase proportionally.

The drain current of BF1217WR,115 is directly proportional to the gate voltage, up to a certain point. As the voltage increases further, the drain current starts to decrease and eventually saturates, which is known as the drain saturation. This effect is known as the drain-saturation-limited current gain of the device. The higher the current gain, the greater the efficiency.

BF1217WR,115 is an excellent choice for a wide range of applications due to its high speed performance and low noise. It is capable of switching high frequencies and is perfect for RF circuits. It is also very reliable and efficient, making it a great option for many different projects.

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