Allicdata Part #: | BF1210,115-ND |
Manufacturer Part#: |
BF1210,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 6V 400MHZ 6TSSOP |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 19mA 400MHz 31dB ... |
DataSheet: | BF1210,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 400MHz |
Gain: | 31dB |
Voltage - Test: | 5V |
Current Rating: | 30mA |
Noise Figure: | 0.9dB |
Current - Test: | 19mA |
Power - Output: | -- |
Voltage - Rated: | 6V |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
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The BF1210,115 is a one-of-a-kind transistor that has a unique application field and working principle. It is a type of Field Effect Transistor (FET) that is often used in applications such as RF amplifiers and RF signal processing. The BF1210,115 is a particular type of FET called a Metal Oxide Semiconductor Field Effect Transistor (MOSFET).
A MOSFET is an electrical switch made up of an insulated gate, channel, and source and drain contacts. The source and drain contacts connect to an external circuit while the insulated gate provides voltage control. Current flows through the device when a voltage is applied to the gate, allowing it to turn on or off. The BF1210,115 is a highly efficient device, allowing for more power output for lower power input. This characteristic makes it ideal for handling high-power transceivers.
The HF1210,115 MOSFET also has RF signal processing capabilities due to its innate nature as a FET. It works as a voltage-variable gain element that is normally used for radio frequency (RF) signal amplification. It works by changing the transconductance in an RF circuit. The voltage is applied through the gate to the channel, and this causes the conducting channel to become narrower in the channel region. As a result, the resistance of the channel increases, reducing the current flowing through it and controlling the gain of the signal.
In addition to its useful RF signal amplification capabilities, the BF1210,115 also has other applications in RF circuit designs. It can perform frequency shifting, switching, amplification, and impedance matching, providing a wide range of options in the context of a single device. The high level of integration speaks to the device\'s high level of precision and reliability.
All in all, the BF1210,115 is a powerful MOSFET that is suitable for various applications in RF circuits. It has voltage control capabilities, allowing for efficient switching and amplification of RF signals, as well as other functions such as frequency shifting and impedance matching. With its ability to control voltage, the BF1210,115 is a capable and reliable device for any project requiring FETs in the vicinity of radio frequencies.
The specific data is subject to PDF, and the above content is for reference
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