BF1204,135

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	N-Channel Dual Gate
Frequency:	400MHz
Gain:	30dB
Voltage - Test:	5V
Current Rating:	30mA
Noise Figure:	0.9dB
Current - Test:	12mA
Power - Output:	--
Voltage - Rated:	10V
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	6-TSSOP
Base Part Number:	BF1204

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BF1204,135 Application Field and Working PrincipleThe transistor BF1204,135 (also known as the BF1204RFN) is a semiconductor device that has been specifically designed to be used in Radio Frequency (RF) applications. It is a MOSFET in the dual-gate RF MOSFET family. The device consists of two silicon-based junctions, which form the source and the drain electrodes, and a control gate located between them. It offers a wide range of features and benefits that make it suitable for use in many RF applications.In terms of application field, the transistors BF1204,135 is generally used to create amplifiers with a low distortion and high noise immunity. It is designed for use in mobile communication systems as well as Base Station systems. These systems have demanding requirements for low-noise operation and reduced power consumption, which makes the BF1204,135 an ideal solution. It can also be used in switching and modulating applications, including FM transmitters, communication systems, and RF test equipment.The working principle of the BF1204,135 is based on its design as a dual-gate MOSFET. It uses two P-type and two N-type diodes, which are connected to the source and drain. The gate signal is applied to both the gates, thereby influencing the output current. The gate signal is also modulated by the gate capacitance, making it possible to adjust the resistance function of the device over a wide frequency band. The two gates are useful for providing adjustable gain and high linearity, which are necessary for improving signal fidelity and signal dynamics.The BF1204,135 is an advanced MOSFET device that is designed to provide excellent performance in RF applications. It features low gate-to-drain and gate-to-source capacitances, which ensures low power consumption and reduced distortion. Its low noise immunity combined with its wide operating frequency range make it highly suitable for use in mobile communication systems and base station systems. This device is also suitable for amplifiers with a wide gain range, thanks to its well-tuned gate-to-drain capacitance. It is also capable of providing adjustable gain and high linearity, which are essential for optimizing signal fidelity and signal dynamics.

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