Allicdata Part #: | BF1202WR,135-ND |
Manufacturer Part#: |
BF1202WR,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH DUAL GATE 4DFP |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 12mA 400MHz 30.5d... |
DataSheet: | BF1202WR,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 400MHz |
Gain: | 30.5dB |
Voltage - Test: | 5V |
Current Rating: | 30mA |
Noise Figure: | 0.9dB |
Current - Test: | 12mA |
Power - Output: | -- |
Voltage - Rated: | 10V |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | CMPAK-4 |
Base Part Number: | BF1202 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BF1202WR,135 is a highly efficient and reliable device for use in RF applications. It is a Field Effect Transistor (FET) which employs Metal Oxide Semiconductor (MOS) technology. This technology has made the BF1202WR,135 a popular choice for engineers and designers working in high frequency applications.The BF1202WR,135 has outstanding operating characteristics and can be used in a wide range of RF applications. It has a wide operating frequency range from 0.001MHz to over 500MHz, making it extremely versatile. Additionally, it has very low power consumption (typically less than 1 milliwatt), high input and output impedance, and high input and output current. This allows it to perform optimally in a wide range of applications.The operational characteristics of the BF1202WR,135 make it ideal for use in many RF applications. It can be used in RF amplifiers, filters, oscillators, mixers, modulators, and many other applications. It is also able to switch between multiple RF frequencies, allowing it to be used in a variety of frequency hopping radio communication applications. Furthermore, it can be used in multiple power amplifiers to increase the range of signals, and is also suitable for short range communication applications. The BF1202WR,135 has a very simple working principle. It consists of two channels, an input and an output. When a signal is applied to the input, an electric field is created which causes the transistors\' gate to open and allow a current to pass through. This current then produces an amplified output signal at the output channel.The BF1202WR,135 is an excellent choice for high frequency applications. It is both reliable and efficient and can be used in a wide range of RF applications. Its low power consumption, high input and output impedances, and high input and output current capabilities make it a great option for many types of systems. Additionally, its flexibility in terms of frequency range, current range, and switching capability makes it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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