BF1203,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-6155-2-ND |
Manufacturer Part#: |
BF1203,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 10V 400MHZ 6TSSOP |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 15mA 400MHz 27dB ... |
DataSheet: | BF1203,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 400MHz |
Gain: | 27dB |
Voltage - Test: | 5V |
Current Rating: | 30mA |
Noise Figure: | 1dB |
Current - Test: | 15mA |
Power - Output: | -- |
Voltage - Rated: | 10V |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
Base Part Number: | BF1203 |
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BF1203,115 transistors are a type of field-effect transistors that are designed for radio frequency applications. They are part of the RF family of transistors, which are used in a variety of applications ranging from wireless communication systems to small-signal amplifiers. The unique design of these transistors makes them especially useful for RF applications, as they are capable of handling high frequencies and power levels with minimal power dissipation.
BF1203,115 transistors are constructed from two differently doped regions of a semiconductor material. The two regions are separated by a thin dielectric layer, such as an oxide. The gate terminal is located on the surface of the transistor, and is what is used to control the current flowing through the transistor. When a voltage is applied to the gate, it creates an electric field that in turn creates a channel in the semiconductor material. This channel allows current to flow between the source and drain terminals of the transistor.
This design makes BF1203,115 transistors well-suited for use in high frequency applications. Since the voltage applied to the gate creates a channel between the source and drain, it means that the transistor can be switched on and off quickly with minimal power dissipation. This makes them ideal for use in systems such as radio receivers, as they can be used to rapidly switch between different frequencies of signals.
In addition to being used as radio-frequency switches, BF1203,115 transistors can also be used as amplifiers. As the voltage applied to the gate of the transistor increases, the current flowing through the transistor increases, allowing it to amplify a signal. This makes them particularly useful for applications that require amplification of high frequency signals, such as in some types of digital audio equipment.
BF1203,115 transistors are also used in some types of analog circuitry, such as in voltage-controlled oscillators. In this type of application, the voltage applied to the gate of the transistor is used to adjust the frequency of the oscillator. This makes it possible to create an extremely precise oscillator, as the voltage can be adjusted up or down to finely tune the frequency.
BF1203,115 transistors are an important part of the RF family of transistors, and are used in a wide variety of applications. They are capable of handling high frequencies and power levels with minimal power dissipation, and can be used both as switches and amplifiers. This makes them invaluable for use in a variety of different high frequency and radio frequency systems.
The specific data is subject to PDF, and the above content is for reference
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