BF1207,115

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BF1207,115 is an N-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). The device is a low-capacitance FET (Field Effect Transistor), with an optimized gate-drain separation distance. It has excellent input match, making it ideal for high-frequency, high-power applications.

The BF1207,115 has a maximum drain current of 4A at 25°C, and can handle up to 5.5A at 80°C with a 25V drain-source voltage. It has rated power dissipation of 200W, with a maximum of 400W at a 25°C case temperature.

The BF1207,115 is primarily designed for RF (Radio Frequency) power amplifier and oscillator applications, but it is also suitable for pulse, class E, and Class A operations. It can handle frequencies up to 3.5GHz with a 1dB compression point of 17dBm. The maximum gain is 15dB at 2.5GHz.

The working principle of the BF1207,115 is simple. When a suitable gate voltage is applied to the device, the gate attracts electrons from the drain, creating an "inversion layer". This inversion layer creates a conductive path between the drain and the source. The output drain current is based on the gate voltage that is applied, and thus the amount of current flowing can be controlled.

To use the BF1207,115, it should be mounted on an appropriate heatsink. If the device is operated at a higher drain-source voltage, or at a high current, the heat dissipation of the device should be considered. The device can withstand a wide range of ambient temperatures, from -55°C to +150°C.

The BF1207,115 can be used in a wide variety of applications, including RF amplifiers, oscillators, low-noise amplifiers, and various types of transmitters. It can also be used in noise generators, and for impedance matching applications.

In summary, the BF1207,115 is an ideal choice for RF power amplifiers and oscillators and is suitable for a wide variety of applications. Its low-capacitance design and optimized gate-drain separation distance make it ideal for high-frequency, high-power applications. The device is easy to mount on an appropriate heatsink, and can handle a wide range of temperatures. Its excellent input match and high maximum gain make it highly desirable for RF applications.

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