BFU520R Allicdata Electronics

BFU520R Discrete Semiconductor Products

Allicdata Part #:

568-11504-2-ND

Manufacturer Part#:

BFU520R

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 12V 30MA SOT-143B
More Detail: RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface M...
DataSheet: BFU520R datasheetBFU520R Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08906
6000 +: $ 0.08331
15000 +: $ 0.07757
30000 +: $ 0.07642
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
Gain: 20dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B
Base Part Number: BFU520
Description

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BFU520R is a type of bipolar transistor (BJT) specifically designed for radio frequency (-rF) applications. This type of transistor offers superior performance compared to general-purpose BJTs and is capable of switching signals at a very high RF frequency. It is commonly used in television and satellite reception as well as in audio equipment and wireless communication equipment.

BFU520R transistors are small in size and feature a low noise characteristic. They are made from an epitaxial silicon NPN structure and have both an emitter and collector lead. The collector lead is used to receive the signal from other components, while the emitter is used to transmit the signal back. In order for the transistor to operate properly, the emitter voltage must be slightly higher than the collector voltage.

The working principle of the BFU520R is based on the concept of the diode junction field-effect transistor (JFET). This type of transistor utilizes a reverse-biased p-n junction to control the flow of charge carriers within the device. When a voltage is applied between the gate and source of the JFET, a depletion layer forms around the p-n junction which effectively acts as a gate. By controlling the gate voltage, the amount of current that can flow through the JFET can be regulated.

The BFU520R is an ideal transistor for RF applications due to its ability to switch signals with very low power consumption. Additionally, the transistor is able to operate at a wide range of frequencies, from DC to over 5 GHz. In addition, the BFU520R provides excellent frequency and voltage stability, as well as good linearity.

Another advantage of the BFU520R is its ability to operate at temperatures as low as -55°C. This makes it an ideal choice for environments where extreme temperatures may be encountered. Additionally, its small size and low power consumption make it an attractive choice for portable or battery-operated devices.

As a result of its excellent features and performance, the BFU520R is widely used in various applications such as communications, consumer electronics and automotive systems. The device is also compatible with a variety of integrated circuits and can be used in a wide range of designs. Additionally, the transistor is available in a variety of packages for easy integration into existing designs.

In conclusion, the BFU520R is a perfectly suited transistor for RF applications. It offers superior performance, excellent linearity, low power consumption and excellent thermal stability. This makes it an ideal choice for a wide range of applications, from consumer electronics and communications to automotive systems and more.

The specific data is subject to PDF, and the above content is for reference

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